Related papers: Valley Hall effect in disordered monolayer MoS2 fr…
The valley degree of freedom of electrons in two-dimensional transition metal dichalcogenides has been extensively studied by theory, optical and optoelectronic experiments. However, generation and detection of pure valley current without…
The discovery of Berry curvature (BC) has spurred a tremendous surge of research into various quantum phenomena such as the anomalous transport of electrons and the topological phases of matter. In two-dimensional crystalline systems, the…
It is well-known that a non-vanishing Hall conductivity requires time-reversal symmetry breaking. However, in this work, we demonstrate that a Hall-like transverse current can occur in second-order response to an external electric field in…
We study the effect of a perpendicular magnetic field on the electronic structure and charge transport of a monolayer MoS$_2$ nanoribbon at zero temperature. We particularly explore the induced valley Zeeman effect through the coupling…
Two-dimensional transition metal dichalcogenides lack inversion symmetry and have broken time-reversal symmetry due to the honeycomb structure and intrinsic ferromagnetism, which leads to their valley polarization. Here, we explored the…
Valley Hall effect is an appearance of the valley current in the direction transverse to the electric current. We develop the microscopic theory of the valley Hall effect in two-dimensional semiconductors where the electrons are dragged by…
Zeeman effect induced by the magnetic field introduces a splitting between the two valleys at K$^+$ and K$^-$ points of the Brillouin zone in monolayer semiconducting transition metal dichalcogenides. In consequence, the photoluminescence…
Moir\'e materials provide fertile ground for the correlated and topological quantum phenomena. Among them, the quantum anomalous Hall (QAH) effect, in which the Hall resistance is quantized even under zero magnetic field, is a direct…
Anomalous valley Hall (AVH) effect is a fundamental transport phenomenon in the field of condensed-matter physics. Usually, the research on AVH effect is mainly focused on 2D lattices with ferromagnetic order. Here, by means of model…
Valley pseudospin in two-dimensional (2D) transition-metal dichalcogenides (TMDs) allows optical control of spin-valley polarization and intervalley quantum coherence. Defect states in TMDs give rise to new exciton features and…
Hall experiments in chiral magnets are often analyzed as the sum of an anomalous Hall effect, dominated by momentum-space Berry curvature, and a topological Hall effect, arising from the real-space Berry curvature in the presence of…
The Hall conductivity $\sigma_{xy}$ of many condensed matter systems presents a step structure when a uniform perpendicular magnetic field is applied. We report the quantum Hall effect in buckled AB-bottom-top bilayer silicene and its…
The quantum anomalous Hall effect can occur in single and few layer graphene systems that have both exchange fields and spin-orbit coupling. In this paper, we present a study of the quantum anomalous Hall effect in single-layer and gated…
In a recent work, new two-dimensional materials, the monolayer MoSi$_{2}$N$_{4}$ and WSi$_{2}$N$_{4}$, have been successfully synthesized in experiment, and several other monolayer materials with the similar structure, such as…
Excitons in monolayer transition metal dichalcogenides (TMDs) are formed at K and K' points at the boundary of the Brillouin zone. They acquire a valley degree of freedom, which may be used as a complementary platform for information…
We propose a new family of the d0 orbital XY (X = K, Rb, Cs; Y = N, P, As, Sb, Bi) monolayers with abundant and novel topology and valley properties. The KN, RbN, RbP, RbAs, CsP, CsAs, and CsSb monolayers possess remarkable quantum…
The quantum valley Hall effect (QVHE) is characterized by the valley Chern number (VCN) in a way that one-dimensional (1D) chiral metallic states are guaranteed to appear at the domain walls (DW) between two domains with opposite VCN for a…
Spin-valley locking in the band structure of monolayers of MoS$_2$ and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic…
Magnetoelectric (ME) effect, the phenomenon of inducing magnetization by application of an electric field or vice versa, holds great promise for magnetic sensing and switching applications. Studies of the ME effect have so far focused on…
The robust spin and momentum valley locking of electrons in two-dimensional semiconductors make the valley degree of freedom of great utility for functional optoelectronic devices. Owing to the difference in optical selection rules for the…