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Superconducting diodes, characterized by the nonreciprocal supercurrent flow, have gained significant attention for their potential in dissipationless electronics. This study presents a superconducting quantum interference device (SQUID)…

Superconductivity · Physics 2025-02-28 Xingjun Wu , Ji-Yin Wang , Haitian Su , Shili Yan , Dong Pan , Jianhua Zhao , Po Zhang , H. Q. Xu

Experiments on hybrid superconducting normal-metal structures have revealed that even in the absence of tunnel junctions the onset of superconductivity can lead to a decrease in the electrical conductance by an amount many orders of…

Superconductivity · Physics 2007-05-23 R. Seviour , C. J. Lambert , M. Leadbeater

We investigated, at temperature $4.2\,\mathrm{K}$, electric transport, flux noise and resulting spin sensitivity of miniaturized Nb direct current superconducting quantum interference devices (SQUIDs) based on submicron Josephson junctions…

Superconductivity · Physics 2015-05-28 J. Nagel , O. F. Kieler , T. Weimann , R. Wölbing , J. Kohlmann , A. B. Zorin , R. Kleiner , D. Koelle , M. Kemmler

Using a quantum noise approach, we discuss the physics of both normal metal and superconducting single electron transistors (SET) coupled to mechanical resonators. Particular attention is paid to the regime where transport occurs via…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 A. A. Clerk , S. Bennett

We report the development of superconducting tantalum nitride (TaN$_{x} $) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO$_{x}$ and TaO$_{x}$ (Cu-AlO$_{x}$-Al-TaN$_{x} $ and…

Superconductivity · Physics 2014-10-15 S. Chaudhuri , I. J. Maasilta

VI-curves of resistively shunted single Josephson junctions with different capacitances and tunneling resistances are found to display a crossover between two types of VI-curves: one without and another with a resistance bump (negative…

Mesoscale and Nanoscale Physics · Physics 2019-10-01 J. S. Penttila , U. Parts , P. J. Hakonen , M. A. Paalanen , E. B. Sonin

We present a fabrication process for fully superconducting interconnects compatible with superconducting qubit technology. These interconnects allow for the 3D integration of quantum circuits without introducing lossy amorphous dielectrics.…

We have demonstrated a novel type of superconducting transmon qubit in which a Josephson junction has been engineered to act as its own parallel shunt capacitor. This merged-element transmon (MET) potentially offers a smaller footprint and…

We theoretically investigate the supercurrent flow in a Josephson junction consisting of two spin-split superconductors combined by a normal metal weak link. The normal metal may be driven out of equilibrium, thus modifying the electron and…

Superconductivity · Physics 2025-08-06 Chi Sun , Jacob Linder

The performance of many superconducting devices is degraded in presence of non-equilibrium quasiparticles in the superconducting part. One promising approach towards their evacuation is the use of normal-metal quasiparticle traps, where…

Mesoscale and Nanoscale Physics · Physics 2020-05-15 R. P. Schmit , F. K. Wilhelm

Recent experiments with nanopatterned thin films revealed an unusual quantum superconductor to metal phase transition (QSMT) with a linear in temperature resistivity. In contrast, most known examples of such transitions and standard…

Strongly Correlated Electrons · Physics 2024-04-08 Jaewon Kim , Erez Berg , Ehud Altman

We have measured the electric transport properties of TiN nanostrips with different widths. At zero magnetic field the temperature dependent resistance R(T) saturates at a finite resistance towards low temperatures, which results from…

Mesoscale and Nanoscale Physics · Physics 2019-04-03 I. Schneider , K. Kronfeldner , T. I. Baturina , C. Strunk

A numerical model based on a lumped circuit element approximation for a bi-superconducting quantum interference device (bi-SQUID) operating in the presence of an external magnetic field is presented in this paper. Included in the model is…

A single-spin qubit placed near the surface of a conductor acquires an additional contribution to its $1/T_1$ relaxation rate due to magnetic noise created by electric current fluctuations in the material. We analyze this technique as a…

We demonstrate a highly linear superconducting quantum interference device (SQUID) amplifier based on a double-loop (Bi-SQUID) architecture incorporating three superconductor-normal metal-superconductor (S-N-S) junctions. Fabricated using…

Superconductivity · Physics 2025-10-06 G. Trupiano , E. Riccardi , C. Puglia , M. Kiczynski , A. Gardin , G. De Simoni , G. C. Tettamanzi , F. Giazotto

Engineering artificial systems by twisting and stacking van der Waals materials has proven to be an excellent platform for exploring emergent quantum phenomena that can be significantly different from the constituents. Recent advances in…

We give a detailed discussion of the Quantum Interference Effect Transistor (QuIET), a proposed device which exploits interference between electron paths through aromatic molecules to modulate current flow. In the off state, perfect…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Charles A. Stafford , David M. Cardamone , Sumit Mazumdar

It is well established that the subgap conductivity through a normal-metal-insulator-superconductor (NIS) tunnel junction is strongly affected by interference of electron waves scattered by impurities. In this paper we investigate how the…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 F. Pistolesi , G. Bignon , F. W. J. Hekking

We report on the first realization of Nb-based \textit{all-metallic} gated Dayem nano-bridge field-effect transistors (Nb-FETs). These Josephson devices operate up to a temperature of $\sim 3$ K, and exhibit full suppression of the…

Mesoscale and Nanoscale Physics · Physics 2020-06-24 Giorgio De Simoni , Claudio Puglia , Francesco Giazotto

In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very…

Mesoscale and Nanoscale Physics · Physics 2014-05-20 Patrick Harvey-Collard , Dominique Drouin , Michel Pioro-Ladrière