Related papers: Angle-dependent bandgap engineering in gated graph…
The emergence of flat electronic bands and of the recently discovered strongly correlated and superconducting phases in twisted bilayer graphene crucially depends on the interlayer twist angle upon approaching the magic angle $\theta_M…
The presence of structure-dependent edge states of graphite is revealed by both ambient- and ultra-highvacuum- (UHV) scanning tunneling microscopy (STM) / scanning tunneling spectroscopy (STS) observations. On a hydrogenated zigzag…
Rational design of artificial lattices yields effects unavailable in simple solids, and vertical superlattices of multilayer semiconductors are already used in optical sensors and emitters. Manufacturing lateral superlattices remains a much…
We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at…
Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity…
Graphene provides a unique platform for hosting high quality 2D electron systems. Encapsulating graphene with hexagonal boron nitride (hBN) to shield it from noisy environments offers the potential to achieve ultrahigh performance…
In twisted h-BN/graphene heterostructures, the complex electronic properties of the fast-traveling electron gas in graphene are usually considered to be fully revealed. However, the randomly twisted heterostructures may also have unexpected…
In the effective mass approximation, electronic property in graphene can be characterized by the relativistic Dirac equation. Within such a continuum model we investigate the electronic transport through graphene waveguides formed by…
Nanostructuring of graphene is in part motivated by the requirement to open a gap in the electronic band structure. In particular, a periodically perforated graphene sheet in the form of an antidot lattice may have such a gap. Such systems…
Most studies on moir\'e superlattices formed from a stack of h-BN and graphene have focused on single layer graphene; graphene with multiple layers is less understood. Here, we show that a moir\'e superlattice of multilayer graphene shows…
We consider the gapped graphene superlattice (SL) constructed in accordance with the Fibonacci rule. Quasi-periodic modulation is due to the difference in the values of the energy gap in different SL elements. It is shown that the effective…
Based on a tight-binding model and a recursive Green's function technique, spin-depentent ballistic transport through tinny graphene sheets (flakes) is studied. The main interest is focussed on: electrical conductivity, giant…
Twist, as a simple and unique degree of freedom, could lead to enormous novel quantum phenomena in bilayer graphene. A small rotation angle introduces low-energy van Hove singularities (VHSs) approaching the Fermi level, which result in…
We investigate the band structure of ABCA-tetralayer graphene (ABCA-TTLG) subjected to an external potential $V$ applied between top and bottom layers. Using the tight-binding model, including the nearest $t$ and next-nearest-neighbor $t'$…
One of severe limits of graphene nanoribbons (GNRs) in future applications is that zigzag GNRs (ZGNRs) are gapless, so cannot be used in field effect transistors (FETs). In this paper, using tight-binding approach and first principles…
Superlattice engineering in van der Waals heterostructures (e.\,g.\ by moir\'e engineering) provides a powerful platform for designing electronic bands and realising correlated and topological quantum phenomena. Here, we pioneer a scheme to…
Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod…
Various mesoscopic devices exploit electrostatic side gates for their operation. In this paper, we investigate how voltage-biasing of graphene side gates modulates the electrical transport characteristics of graphene channel. We explore…
This paper investigates strain effects on the electronic and optical properties of monolayer GaSe using first-principles calculations. The deformation significantly alters energy dispersion, band gap, and the band edge states of GaSe. The…
For electron optics in graphene, the propagation effect has so far been the only physical mechanism available. The resulting electron-optics-based components are large in size and operate at low temperatures to avoid violating the ballistic…