Related papers: Subthermal switching with nanomechanical relays
The cantilever tip of a nanoswitch in close proximity to the ground plate is considered with account of electrostatic, elastic, van der Waals (Casimir), and also contact repulsive forces. The van der Waals (Casimir) and contact repulsive…
The electrical response of two-dimensional electron gas to vibrations of a nanomechanical cantilever containing it is studied. Vibrations of perpendicularly oriented cantilevers are experimentally shown to change oppositely the conductivity…
Since many years, sub-60mV/decade switching has been reported in ferroelectric FETs. However, thus far these reports have lacked full physical explanation since they typically use a negative capacitance in the ferroelectric layer to be able…
We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical…
The sensitivity of mechanical resonators to physical quantities such as acceleration, pressure, mass and temperature enables them to underpin sensing and metrology applications. Here, we observe that the resonance frequency of a…
We investigate electron shuttling in three-terminal nanoelectromechanocal device built on a movable metallic rod oscillating between two drains. The device shows a double-well shaped electromechanical potential tunable by a source-drain…
Direct imaging and quantification of actuation in nanostructures that undergo structural phase transitions could advance our understanding of collective phenomena in the solid state. Here, we demonstrate visualization of structural phase…
Novel devices such as tunneling field-effect transistors (FETs) and ferroelectric FETs have been demonstrated to break the subthreshold swing (SS) limit with sub-60 mV/decade switching for further low voltage/low power applications. In this…
We investigate the current-voltage (IV) characteristics of a model single-electron transistor where mechanical motion, subject to strong dissipation, of a small metallic grain is possible. The system is studied both by using Monte Carlo…
Dynamic interactions between two oscillating micromechanical cantilevers are studied. In the experiment, the tip of a high-frequency cantilever is positioned near the surface of a second low-frequency cantilever. Due to the highly nonlinear…
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…
The pressure and temperature dependency of the electrical conductivity of poly(vinyl alcohol)/poly(vinyl pyrrolidone) (1/1, w/w) and poly(vinyl alcohol) and composites with dispersed nano-graphene platelets were studied. Above the critical…
We measure the temperature, magnetic-field, and current dependence for the switching of nanomagnets by a spin-polarized current. Depending on current bias, switching can occur between either two static magnetic states or a static state and…
The physics of low subthreshold devices is interpreted in terms of a gate dependent change in their mode averaged transmission function, in addition to a capacitive shift in their overall mode spectrum. Accordingly, we explore a variety of…
In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all…
By developing a two-dimensional (2D) full quantum simulation, the attributes of carbon nanotube field-effect transistors (CNTFETs) in different temperatures have been comprehensively investigated. Simulations have been performed by…
We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required…
We investigate the electrical switching of charge and spin transport in a topological insulator nanoconstriction in a four terminal device. The switch of the edge channels is caused by the coupling between edge states which overlap in the…
Using a three-dimensional focused-ion beam lithography process we have fabricated nanopillar devices which show spin transfer torque switching at zero external magnetic fields. Under a small in-plane external bias field, a field-dependent…
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains…