Related papers: III-V/Si Wafer Bonding Using Transparent, Conducti…
The formation of stable copper-silicide (Cu3Si) interfaces is crucial for cost-effective, high-efficiency solar cells. However, copper's diffusivity and electromigration issues pose challenges for contact stability. This study employs…
A study on the optimization of ambient temperature growth and superconducting properties of Ti-V alloy thin films grown on SiO2-coated Si substrate is reported here. These films have been synthesized by co-sputtering of Ti and V targets,…
With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical…
We investigated a possibility of application of liquid metal contacts for devices based on thermotunneling. Electric and thermal characteristics of low wetting contact Hg/Si, and high wetting contacts Hg/Cu were determined and compared. We…
We present the results of an experimental study of superconducting, disordered, thin-films of amorphous Indium Oxide. These films can be driven from the superconducting phase to a reentrant insulating state by the application of a…
Transparent conducting oxides (TCOs), in general, are degenerated semiconductors with large electronic band-gap. They have been widely used for display screens, optoelectronic, photonic, and photovoltaic devices due to their unique dual…
Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates…
Transparent conducting oxides (TCOs) represent a remarkable class of materials that possess both excellent electrical conductivity and high optical transparency, which are typically considered mutually exclusive in traditional materials. In…
Hybrid organic-inorganic (HOI) compounds are excellent candidates for a wide spectrum of applications in diverse fields such as optics, electronics, energy and biotechnology. Their broad range of versatility is achieved by combining the…
Silicon Carbide (SiC) is a typical material for third-generation semiconductor. The thermal boundary resistance (TBR) of 4H-SiC/SiO2 interface, was investigated by both experimental measurements and theoretical calculations. The structure…
Advances in opto-electronics are often led by discovery and development of materials featuring unique properties. Recently the material class of transparent conductive oxides (TCO) has attracted attention for active photonic devices…
Sub-micrometer thin films are promising platforms for emerging flexible photovoltaic devices. Although the current market already produces efficient solar cells, the average wafer thickness of these devices remains far from the…
We have demonstrated a high-performance low temperature solution processed electron selective contact consisting of 10 at% antimony doped tin oxide (ATO) and the neutral polymer polyethylenimine (PEI). Inverted organic photovoltaics (OPVs)…
The successful application of titanium oxide-graphene hybrids in the fields of photocatalysis, photovoltaics and photodetection strongly depends on the interfacial contact between both materials. The need to provide a good coupling between…
In this work, a reversible control over the visible luminescence of phosphor ZnO is achieved by the application of a few volts (<5V) to nanostructured ZnO film sandwiched between ITO and LiClO4/PEO solid electrolyte. Since ZnO is a good…
In recent years, epsilon-near-zero (ENZ) materials have attracted much attention due to their unique properties that can be tuned under electrical and optical signals. Furthermore, they allow for a strong enhancement of a nonlinearity close…
In recent years, considerable efforts have been devoted to developing novel electron-selective materials for crystalline Si (c-Si) solar cells with the attempts to simplify the fabrication process and improve efficiency. In this study,…
Coupling between $\sigma$-bonding electrons and phonons is generally very strong. To metallize $\sigma$-electrons provides a promising route to hunt for new high-T$_c$ superconductors. Based on this picture and first-principles density…
Epitaxial 200nm BiFe$_{0.95}$Mn$_{0.05}$O$_{3}$ (BFO) film was grown by pulsed laser deposition on (111) oriented SrTiO3 substrate buffered with a 50nm thick SrRuO$_{3}$ electrode. The BFO thin film shows a rhombohedral structure and a…
Vanadium silicide (V$_3$Si) is a promising superconductor for integration with silicon-based electronics, however the interfacial growth kinetics have a strong influence on the resulting superconducting properties and are not yet fully…