Related papers: Critical current and linewidth reduction in spin-t…
We experimentally study spin-Hall nano-oscillators based on [Co/Ni] multilayers with perpendicular magnetic anisotropy. We show that these devices are capable of single-frequency auto-oscillations at current densities comparable to those in…
The oscillation properties of a spin torque oscillator consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer are studied based on an analysis of the energy balance between spin torque and damping. The…
We perform strategic current injection in a small mesoscopic superconductor and control the (non)equilibrium quantum states in an applied homogeneous magnetic field. In doing so, we realize a current-driven splitting of multi-quanta…
We derive within a time-dependent scattering formalism expressions for both the current through ac-driven nanoscale conductors and its fluctuations. The results for the time-dependent current, its time average, and, above all, the driven…
We study the effects of spin-flip scatterings on the time-dependent transport properties through a magnetic quantum dot attached to normal and ferromagnetic leads. The transient spin-dynamics as well as the steady-state tunneling…
We use He$^+$ irradiation to tune the nonlinearity, $\mathcal{N}$, of all-perpendicular spin-torque nano-oscillators (STNOs) using the He$^+$ fluence-dependent perpendicular magnetic anisotropy (PMA) of the [Co/Ni] free layer. Employing…
The maximum current (critical current) a type-II superconductor can transmit without energy loss is limited by the motion of the quantized magnetic flux penetrating into a superconductor. Introducing nanoscale holes into a superconducting…
This article discusses the spin-torque effect in a spin-valve made out of two ferromagnetic leads connected through a coherent nanoconductor (NC), in the limit where a single channel of the NC lies near the Fermi energy of the leads. Due to…
Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we…
We study the current controlled modulation of a nano-contact spin torque oscillator. Three principally different cases of frequency non-linearity ($d^{2}f/dI^{2}_{dc}$ being zero, positive, and negative) are investigated. Standard…
We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of $6\times…
We demonstrate an optimized fabrication process for electric field (voltage gate) controlled nano-constriction spin Hall nano-oscillators (SHNOs), achieving feature sizes of <30 nm with easy to handle ma-N 2401 e-beam lithography negative…
Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin-orbit coupling metals has the…
Spin-polarised radio-frequency currents, whose frequency is equal to that of the gyrotropic mode, will cause an excitation of the core of a magnetic vortex confined in a magnetic tunnel junction. When the excitation radius of the vortex…
We study the magnetization dynamics in a nanocontact magnetic vortex oscillators as function of temperature. Low temperature experiments reveal that the dynamics at low and high currents differ qualitatively. At low currents, we excite a…
We propose model magneto-logic NOR and NAND gates using a spin valve pillar, wherein the logical operation is induced by spin-polarized currents which also form the logical inputs. The operation is facilitated by the simultaneous presence…
Mutual synchronization of N serially connected spintronic nano-oscillators increases their coherence by a factor $N$ and their output power by $N^2$. Increasing the number of mutually synchronized nano-oscillators in chains is hence of…
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is…
Spin currents may be generated by applying bias voltages V to the nanostructures even in the absence of spin-active ferromagnetic interfaces. Most theoretical proposals concentrate on a concrete spin-orbit interaction and on the…
We explore the prospects of wafer scale inductive probing of the critical current density $j^{c0}$ for spin transfer torque switching of a CoFeB/MgO/CoFeB magnetic tunnel junction with varying MgO thickness. From inductive measurements…