Related papers: Decrease of heavy-hole exciton mass induced by uni…
We derive analytically the change of exciton fine structure splitting (FSS) under the external stresses in the self-assembled InAs/GaAs quantum dots using the Bir-Pikus model. We find that the FSS change is mainly due to the strain induced…
We present experimental observations of a non-resonant dynamic Stark shift in strongly coupled microcavity quantum well exciton-polaritons - a system which provides a rich variety of solid-state collective phenomena. The Stark effect is…
We have used magneto-photoluminescence measurements to establish that InP/GaAs quantum dots have a type-II (staggered) band alignment. The average excitonic Bohr radius and the binding energy are estimated to be 15nm and 1.5 meV…
We report on a colossal negative magnetoresistance (MR) in GaAs/AlGaAs quantum well which, at low temperatures, is manifested by a drop of the resistivity by more than an order of magnitude at a magnetic field $B \approx 1$ kG. In contrast…
Optically generated exciton-polaritons in cylindric semiconductor pillar microcavity with embedded GaAs/AlGaAs quantum wells demonstrate a clear polariton lasing regime. When exciting in the center of the pillar we detect a ring-shaped…
We have observed a large spin splitting between "spin" $+1$ and $-1$ heavy-hole excitons, having unbalanced populations, in undoped GaAs/AlAs quantum wells in the absence of any external magnetic field. Time-resolved photoluminescence…
We reveal the existence of a large in-plane heavy-hole $g$ factor in symmetric self-assembled (001) (In,Ga)As/GaAs quantum dots due to warping of valence band states. This warping dominates over the well-established mechanism associated…
The Mott transition from a dipolar excitonic liquid to an electron-hole plasma is demonstrated in a wide GaN/(Al,Ga)N quantum well at $T=7$K by means of spatially-resolved magneto-photoluminescence spectroscopy. Increasing optical…
Quantum information transfer necessary to reconcile black hole evaporation with quantum mechanics, while approximately preserving regular near-horizon geometry, can be simply parameterized in terms of couplings of the black hole internal…
We report an experimental study of the quantum corrections to the longitudinal conductivity and the Hall coefficient of a low mobility, high density two-dimensional two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide…
Nonperturbative coupling between cavity photons and excitons leads to formation of hybrid light-matter excitations termed polaritons. In structures where photon absorption leads to creation of excitons with aligned permanent dipoles, the…
The effect of pressure on acceptor levels and hole scattering mechanisms in p-GaSe is investigated through Hall effect and resistivity measurements under quasi-hydrostatic conditions up to 4 GPa. The pressure dependence of the hole…
We have fabricated pillar microcavity samples with Bragg mirrors consisting of alternate layers of GaAs and Aluminium Oxide. Compared to the more widely studied GaAs/AlAs micropillars these mirrors can achieve higher reflectivities with…
Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane…
We propose that the exciton condensate may form in a well-controlled way in appropriately arranged semiconductor quantum well structures. The mean-field theory of Keldysh and Kopaev, exact in both the high density and the low density…
We simulate the time-dependent coherent dynamics of a spatially indirect exciton (an electron-hole pair with the two particles confined in different layers) in a GaAs coupled quantum well system. We use a unitary wave-packet propagation…
In this paper we present a study of an exciton system where electrons and holes are confined in double quantum well structures. The dominating interaction between excitons in such systems is a dipole - dipole repulsion. We show that the…
We present a method for determining correlations in a gas of indirect excitons in a semiconductor quantum well structure. The method involves subjecting the excitons to a periodic electrostatic potential that causes modulations of the…
We introduce a computationally efficient approach to calculating the characteristics of excitons in quantum wells. In this approach we derive a system of self-consistent equations describing the motion of an electron-hole pair. The motion…
The ground state energy of exciton bound by distant ionized donor impurity in quasi-two-dimensional GaAs/AlGaAs semiconductor quantum well (QW) is studied theoretically within the Hartree approach in the effective mass approximation. The…