English
Related papers

Related papers: Preferential Orientation Relationships in Ca$_2$Mn…

200 papers

While structure refinement is routinely achieved for simple bulk materials, the accurate structural determination still poses challenges for thin films due on the one hand to the small amount of material deposited on the thicker substrate…

NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth with a cube-on-cube epitaxial relationship was confirmed by…

The interplay between substrates and superconducting thin films has attracted increasing attention. Here, we report an in-depth investigation on superconducting properties of the epitaxial TiN thin films grown on three different substrates…

Superconductivity · Physics 2025-01-27 Yixin Liu , Yuchuan Liu , Zulei Xu , Aobo Yu , Xiaoni Wang , Wei Peng , Yu Wu , Gang Mu , Zhi-Rong Lin

Fe$_{3}$Si/Ge(Fe,Si)/Fe$_{3}$Si thin film stacks were grown by a combination of molecular beam epitaxy and solid phase epitaxy (Ge on Fe$_{3}$Si). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron…

Materials Science · Physics 2019-07-12 B Jenichen , M Hanke , S Gaucher , A Trampert , J Herfort , H Kirmse , B Haas , E Willinger , X Huang , S C Erwin

Molecular beam epitaxy enables the growth of thin film materials with novel properties and functionalities. Typically, the lattice constants of films and substrates are designed to match to minimise disorders and strains. However,…

The influence of oxygen stoichiometry on the uranium local environment is explored in epitaxial single crystal uranium oxide thin films grown by DC magnetron sputtering. Through post-growth annealing, the stoichiometry of as-grown UO$_{2}$…

We have investigated the electronic and optical properties of (Sr$_{1-x}$Ca$_{x}$)$_2$IrO$_4$ (x= 0 - 0.375) and (Sr$_{1-y}$Ba$_y$)$_2$IrO$_4$ (y= 0 - 0.375) epitaxial thin-films, in which the bandwidth is systematically tuned via chemical…

Strongly Correlated Electrons · Physics 2017-06-20 M. Souri , B. H. Kim , J. H. Gruenewald , J. G. Connell , J. Thompson , J. Nichols , J. Terzic , B. I. Min , G. Cao , J. W. Brill , A. Seo

The crystallographic orientation of SrIrO3 surfaces is decisive for the occurrence of topological surface states. We show from DFT computations that (001) and (110) free surfaces have comparable energies, and, correspondingly, we…

Materials Science · Physics 2020-05-15 L. Fruchter , V. Brouet , F. Brisset , H. Moutaabbid , Y. Klein

The epitaxy of MoO2 on c_plane sapphire substrates is examined. A theoretical approach, based on density functional theory calculations of the strain energy, allowed to predict the preferred layer/substrate epitaxial relationships. To test…

While pyrochlore iridate thin films are theoretically predicted to possess a variety of emergent topological properties, experimental verification of these predictions can be obstructed by the challenge in thin film growth. Here we report…

We report the molecular beam epitaxy of Bi_1-xSb_x thin films ($0 \leq x \leq 1$) on (0001) sapphire substrates using a thin (Bi,Sb)$_2$Te$_3$ buffer layer. Characterization of the films using reflection high energy diffraction, x-ray…

The interface and electronic structure of thin (~20-74 nm) Co3O4(110) epitaxial films grown by oxygen-assisted molecular beam epitaxy on MgAl2O4(110) single crystal substrates have been investigated by means of real and reciprocal space…

We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that…

Materials Science · Physics 2010-09-22 A. G. Swartz , J. Ciraldo , J. J. I. Wong , Yan Li , Wei Han , Tao Lin , S. Mack , J. Shi , D. D. Awschalom , R. K. Kawakami

We explore the growth of {\alpha}-Ta thin films ranging from ultra-thin (2 nm) to thick (250 nm) films grown by sputter epitaxy on c-plane sapphire substrates. We utilized 100 W power with a 32 mTorr sputter pressure at 650 {\deg} substrate…

We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues…

Materials Science · Physics 2017-10-05 Patrick B. Marshall , Honggyu Kim , Kaveh Ahadi , Susanne Stemmer

Epitaxial La doped BaSnO3 films were grown in an adsorption controlled regime by molecular beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm^2…

BaBiO3 has lately gained high research attention as a parent material for an interesting family of alloyed compositions with multiple technological applications. In order to grow a variety of structures, a versatile deposition tool such as…

Materials Science · Physics 2025-04-29 Islam Ahmed , Stefan De Gendt , Clement Merckling

We study the low-temperature behavior and the phase transition of a thin film by Monte Carlo simulation. The thin film has a simple cubic lattice structure where each site is occupied by a Potts parameter which indicates the molecular…

Statistical Mechanics · Physics 2015-06-11 Danh-Tai Hoang , Maciej Kasperski , Henryk Puszkarski , H. T. Diep

Layered perovskite La2CuO4+delta(LCO) thin films were epitaxially grown on SrTiO3 (STO) and LaSrAlO4 (LSAO) substrates by atomic-layer-by-layer molecular beam epitaxy. The lattice de-fects and residual strain in these films were…

Materials Science · Physics 2007-05-23 Jiaqing He , Robert F. Klie , Gennady Logvenov , Ivan Bozovic , Yimei Zhu

This paper reports the nanoscale texture and microstructure of a high-performance NdFeAs(O,F) superconducting thin film grown by molecular beam epitaxy on a textured MgO/Y$_2$O$_3$/Hastelloy substrate. The NdFeAs(O,F) film forms a highly…