Related papers: Light emission from silicon with tin-containing na…
Silicon nanocrystals with diameters between 1 and 3 nm and surfaces passivated by chlorine or a mixture of chlorine and hydrogen were modeled using density functional theory, and their properties compared with those of fully hydrogenated…
Nanocrystals of indium oxide (In$_2$O$_3$) with sizes below 10 nm were prepared in alumina matrixes by using a co-pulverization method. The used substrates such as borosilicate glasses or (100) silicon as well as the substrate temperatures…
Methods for the creation of thin amorphous silicon dioxide (aSiO2) layers on crystalline silicon substrates with very high densities of silicon dangling bonds (so called E' centers) have been explored and volume densities of [E']> 5x10^18…
Silicon wafer and multilayer-coated mirror samples were exposed to impact of drops of molten tin to examine the adhesion behavior and cleaning possibilities. The sticking of tin droplets to horizontal substrates was examined for different…
Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applications in sensing and communication. To address this…
Thin gadolinium metallic layers were deposited by high-pressure sputtering in pure Ar atmosphere. Subsequently, in situ thermal oxidation was performed at temperatures ranging from 150 to 750 $^\circ$C. At an oxidation temperature of 500…
We present the design, fabrication and preliminary experiments of two-dimensional photonic crystal cavities made in nanoporous silicon luminescent at 700-800 nm. Enhancement in photoluminescence extraction efficiency at the resonant…
Nanocrystalline bulk materials are desirable for many applications as they combine mechanical strength and specific electronic transport properties. Our bottom up approach starts with tailored nanoparticles. Compaction and thermal treatment…
We report on experimental observation of laser-like emission from a periodic all-silicon nanostructure formed on an electronic grade silicon-on-insulator wafer, using a highly-uniform hexagonal self-organized array of nanopores as an etch…
Gold nanoclusters are grown by 1.8 MeV Au++ implantation in silica matrix and subsequent air annealing in the temperature range of 873K-1273K. Post-annealed samples show plasmon resonance in the optical region (~ 2.38-2.51 eV) for average…
Study of light emitting silicon fabricated by ion implantation.
The results of XPS core-level and valence band measurements, photoluminescence spectra of a-SiO2 implanted by Zn-ions (E=30 keV, D=1*1017 cm^-2) and Density Functional Theory calculations of electronic structure as well as formation…
We performed high-temperature luminescence studies of silicon-vacancy color centers obtained by ion implantation in single crystal diamond. We observed reduction of the integrated fluorescence upon increasing temperature, ascribable to a…
Titanium dioxide (TiO2) nanocrystals were prepared by wet chemical method and characterized by x-ray diffraction (XRD), transmission electron microscopy (TEM), Raman scattering (RS) and photoluminescence (PL). The X-ray diffraction shows…
Colour centres in silicon have great potential as single photon sources for quantum technologies. Some of them - like the T centre - also possess optically-active spins that enable spin-photon interfaces for generating entangled photons and…
Raman scattering experiments from silver nanocrystals embedded in films of amorphous silica are reported. In addition to the low-frequency peak due to vibrational quadrupolar modes, a broadband is observed in the high-frequency range, with…
Ordinary metallic photonic crystals (PCs) have photonic band gaps in which the density of states (DOS) is strongly modified. Thermal emission of photons can be suppressed and enhanced accordingly. We consider the thermal emission…
We report the successful fabrication of superconducting tantalum nitride (TaN) thin films using a pulsed laser deposition technique with 1064 nm radiation. Films with thickness $ \sim $ 100 nm deposited on MgO (100) single crystals and on…
It is investigated the formation of the phase composition and structure in the nanoscaled CoSbx (30 nm) films deposited by the method of molecular-beam epitaxy on the substrates of the oxidated monocrystalline silicon at 200 C and following…
Detection of UV photons is becoming increasingly necessary with the use of noble gases and liquids in elementary particle experiments. Cerenkov light in crystals and glasses, scintillation light in neutrino, dark matter, and rare decay…