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We performed first principles calculations on work functions of single wall carbon nanotubes (SWNTs), which can be divided into two classes according to tube diameter (D). For class I tubes (D > 1 nm), work functions lie within a narrow…

Materials Science · Physics 2009-11-11 Bin Shan , Kyeongjae Cho

This paper reports on the investigation of the electronic properties of a thin film CdS/CdTe solar cell with the Ion Beam Induced Charge (IBIC) technique. The device under test is a thin film (total thickness around 10 um) multilayer…

Instrumentation and Detectors · Physics 2016-08-31 E. Colombo , A. Bosio , S. Calusi , L. Giuntini , A. Lo Giudice , C. Manfredotti , M. Massi , P. Olivero , A. Romeo , N. Romeo , E. Vittone

Spin-orbit interactions (SOI) are a set of sub-wavelength optical phenomenon in which spin and spatial degrees of freedom of light are intrinsically coupled. One of the unique example of SOI, spin-Hall effect of light (SHEL) has been an…

Optics · Physics 2021-02-03 Diptabrata Paul , Deepak K. Sharma , G. V. Pavan Kumar

Being a source of clean and renewable energy, the possibility to convert solar radiation in electric current with high efficiency is one of the most important topics of modern scientific research. Currently the exploitation of interaction…

Materials Science · Physics 2013-06-11 Marco Govoni , Ivan Marri , Stefano Ossicini

From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid…

The performance of organic solar cells (OSCs) can be greatly improved by incorporating silica-coated gold nanorods (Au@SiO2 NRs) at the interface between the hole transporting layer and the active layer due to the plasmonic effect. The…

Silicon (Si) anodes attract a lot of research attention for their potential to enable high energy density lithium-ion batteries (LIBs). Many studies focus on nanostructured Si anodes to counteract deterioration. In this work, we model LIBs…

Chemical Physics · Physics 2024-04-23 Franziska Kilchert , Max Schammer , Arnulf Latz , Birger Horstmann

In optoelectronic devices such as solar cells and photodetectors, a portion of electron-hole pairs are generated as so called hot carriers with an excess energy that is typically lost as heat. The long standing aim to harvest this excess…

Mesoscale and Nanoscale Physics · Physics 2021-04-20 Jonatan Fast , Urs Aeberhard , Stephen P. Bremner , Heiner Linke

Silicon nanoparticles have the promise to surpass the theoretical efficiency limit of single-junction silicon photovoltaics by the creation of a "phonon bottleneck", a theorized slowing of the cooling rate of hot optical phonons that in…

Mesoscale and Nanoscale Physics · Physics 2021-04-14 Ilana J. Porter , Angela Lee , Scott K. Cushing , Hung-Tzu Chang , Justin C. Ondry , A. Paul Alivisatos , Stephen R. Leone

The electronic and structural properties of zigzag and armchair single-wall carbon nanotubes (SWCNT) with a single vacancy or two vacancies located at various distances have been obtained within the frame of the Density Function Theory…

Atomic and Molecular Clusters · Physics 2008-07-15 A. Proykova , H. Iliev , Feng Yin Li

In this paper we study CdS/CdTe solar cells by means of AMPS-1D software. First we study the effect of thickness of semiconductor layers on the output parameters of the CdS/CdTe solar cell, such as density of short-circuit current, open…

Instrumentation and Detectors · Physics 2016-02-05 Ashrafalsadat S. Mirkamali , Khikmat Kh. Muminov

The performances of various configurations of InGaN solar cells are compared using nextnano software. Here we compare a flat base graded wall GaN/InGaN structure, with an InxGa1-xN well with sharp GaN contact layers, and an InxGa1-xN…

Radiative and non-radiative charge carrier recombination in thin-film diodes plays a key role in determining the efficiency of electronic devices made of next generation semiconductors such as organic, perovskite and nanocrystals. In this…

Applied Physics · Physics 2019-08-06 Oskar J. Sandberg , Ardalan Armin

We compute both electron- and phonon transmissions in thin disordered silicon nanowires. Our atomistic approach is based on tight-binding and empirical potential descriptions of the electronic and phononic systems, respectively. Surface…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 Troels Markussen , Antti-Pekka Jauho , Mads Brandbyge

We study the effects of charged impurity scattering on the electronic transport properties of <110>-oriented Si nanowires in a gate-all-around geometry, where the impurity potential is screened by the gate, gate oxide and conduction band…

Mesoscale and Nanoscale Physics · Physics 2011-06-07 Martin P. Persson , Hector Mera , Yann-Michel Niquet , Christophe Delerue , Mamadou Diarra

We carried out simulative investigations on a non-toxic, lead-free perovskite solar cell (PSC), where Cs2AgBiBr6, P3HT, ZnO nanorod, and C were utilized as the absorber layer, hole transport layer, electron transport layer, and back…

Materials Science · Physics 2021-06-25 Intekhab Alam , Rahat Mollick , Md Ali Ashraf

In this article, we demonstrate the design and simulation of a highly-efficient n-CdS/p-CIGS/p+-CGS dual heterojunction solar cell. The simulation was performed using SCAPS-1D software with reported experimental physical parameters. The…

Applied Physics · Physics 2021-03-17 Shaikh Khaled Mostaque , Bipanko Kumar Mondal , Jaker Hossain

We report on the structure and electrical characteristics of silicon nanowire arrays prepared by metal assisted chemical etching (MACE) method, investigated by cross-sectional scanning electron microscopy (SEM) and high resolution X-ray…

Solution-processable, two-dimensional semiconductors are promising optoelectronic materials which could find application in low-cost solar cells. Lead sulfide nanocrystals raised attention since the effective band gap can be adapted over a…

Materials Science · Physics 2015-07-20 Sedat Dogan , Thomas Bielewicz , Vera Lebedeva , Christian Klinke

Sn-containing Si and Ge alloys belong to an emerging family of semiconductors with the potential to impact group IV semiconductor devices. Indeed, the ability to independently engineer both lattice parameter and band gap holds the premise…

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