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Nitrogen embedded ZnO:N films prepared by pulsed laser deposition exhibit significant ferromagnetism. The nitrogen ions contained in ZnO confirmed by Secondary Ion Microscopic Spectrum and Raman experiments and the embedded nitrogen ions…
Hydrogenation-induced noncollinear magnetic anisotropy is observed from the evolution of the magnetic domains in FePd alloy thin films using magneto-optic Kerr effect (MOKE) microscopy. MOKE images reveal complicated competitions between…
The broad-band optical spectroscopy was used to study the optical and the hidden transport properties of the Ba(Fe$_{1-x}$Ni$_x$)$_2$As$_2$ superconducting films with different Ni contents. The normal state data were analyzed using a…
NiMn is a collinear antiferromagnet with high magneto crystalline anisotropy ($K_2=-9.7\times10^5\;\text{J m}^{-3}$). Through magnetic annealing of NiMn with excess Ni, strongly pinned magnetic moments emerge due to an imbalance in the…
This paper presents statistical analyses of random motions in a single layer of fluidized lightweight spherical particles. Foam polystyrene spheres were driven by an upward airflow through the sieve mesh, and their two-dimensional motion…
The results of RHEED, FTIR and Raman spectroscopy study of silicon and germanium films with the thickness up to 200 nm grown from molecular beams on dielectric Si$_3$N$_4$/SiO$_2$/Si(001) substrates are presented. Noticeable changes of the…
Evolutionary trends in the surface abundances of heavier elements have recently been identified in the globular cluster NGC 6397 ([Fe/H]=-2), indicating the operation of atomic diffusion in these stars. Such trends constitute important…
NiFe$_2$O$_4$ thin films with varying thickness were grown on SrTiO$_3$(001) by reactive molecular beam epitaxy. Soft and hard x-ray photoelectron spectroscopy measurements reveal a homogeneous cation distribution throughout the whole film…
The performance of strained silicon as the channel material for transistors has plateaued. Motivated by increasing charge-carrier mobility within the device channel to improve transistor performance, germanium (Ge) is considered as an…
The Fraunhofer diffraction of quantum particles from materials with sharp electron-density edges or symmetric bond structures is ubiquitous. In contrast, diffraction from atoms with characteristic asymptotically-diffused electron…
The diffusion of atoms and radicals on interstellar dust grains is a fundamental ingredient for predicting accurate molecular abundances in astronomical environments. Quantitative values of diffusivity and diffusion barriers usually rely…
We studied the effect of recrystallization and grain growth on grain boundary self-diffusion in ultrafine grained Ni prepared by high pressure torsion. Two Ni materials of low (99.6 wt. %) and high (99.99 wt. %) purity levels were compared…
Active galactic nuclei (AGN) have Fe II emission from the broad line region (BLR) that differs greatly in strength from object to object. We examine the role of the total and gas-phase iron abundance in determining Fe II strength. Using AGN…
The diffusion kinetics in a CoCrFeMnNi high entropy alloy is investigated by a combined radiotracer--interdiffusion experiment applied to a pseudo-binary Co$_{15}$Cr$_{20}$Fe$_{20}$Mn$_{20}$Ni$_{25}$ /…
Understanding protein motion within the cell is crucial for predicting reaction rates and macromolecular transport in the cytoplasm. A key question is how crowded environments affect protein dynamics through hydrodynamic and direct…
Different peak trends of tiny grains carbon film have been observed under the investigations of Raman spectroscopy and energy loss spectroscopy. Carbon films known in nanocrystalline and ultra-nanocrystalline diamond films are synthesized…
A cluster deposition method was used to produce films of loosely aggregated nanoclusters (NC) of Fe core-Fe3O4 shell or fully oxidized Fe3O4. Films of these NC on Si(100) or MgO(100)/Fe3O4(100) were irradiated to 10^16 Si2+/cm2 near room…
We investigated high-frequency behavior of FeN thin films prepared by reactive sputtering through ferromagnetic resonance (FMR) and its relationship with the static magnetic properties. The FMR was observed in the frequency range from 2 to…
The stability of interfaces and the mechanisms of thin film growth on semiconductors are issues of central importance in electronic devices. These issues can only be understood through detailed study of the relevant microscopic processes.…
Controlling mesoscale and nanoscale material structures and properties through self-organized atomic behavior is essential for atomic-scale manufacturing. However, direct and visual studies on the cross-scale effects of such atomic…