Related papers: When Do WOM Codes Improve the Erasure Factor in Fl…
The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer…
This paper constructs WOM codes that combine rewriting and error correction for mitigating the reliability and the endurance problems in flash memory. We consider a rewriting model that is of practical interest to flash applications where…
A write-once memory (wom) is a storage medium formed by a number of ``write-once'' bit positions (wits), where each wit initially is in a `0' state and can be changed to a `1' state irreversibly. Examples of write-once memories include SLC…
In this paper, we propose a construction of non-binary WOM (Write-Once-Memory) codes for WOM storages such as flash memories. The WOM codes discussed in this paper are fixed rate WOM codes where messages in a fixed alphabet of size $M$ can…
This paper investigates the design and application of write-once memory (WOM) codes for flash memory storage. Using ideas from Merkx ('84), we present a construction of WOM codes based on finite Euclidean geometries over $\mathbb{F}_2$.…
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell is implemented as either NAND or NOR floating gate. NAND flash is currently the most widely used type of flash memory. In a NAND flash memory,…
In recent years, due to the spread of multi-level non-volatile memories (NVM), $q$-ary write-once memories (WOM) codes have been extensively studied. By using WOM codes, it is possible to rewrite NVMs $t$ times before erasing the cells. The…
In the framework of write-once memory (WOM) codes, it is important to distinguish between codes that can be decoded directly and those that require that the decoder knows the current generation to successfully decode the state of the…
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell can take on q different values or levels. While increasing the cell level is easy, reducing the level of a cell can be accomplished only by…
Recently, flash memories have become a competitive solution for mass storage. The flash memories have rather different properties compared with the rotary hard drives. That is, the writing of flash memories is constrained, and flash…
Flash memory is a non-volatile computer memory comprising blocks of cells, wherein each cell can take on q different values or levels. While increasing the cell level is easy, reducing the level of a cell can be accomplished only by erasing…
We propose a new Write-Once-Memory (WOM) coding scheme based on source polarization. By applying a source polarization transformation on the to-be-determined codeword, the proposed WOM coding scheme encodes information into the bits in the…
Phase Change Memory (PCM) has rapidly progressed and surpassed Dynamic Random-Access Memory (DRAM) in terms of scalability and standby energy efficiency. Altering a PCM cell's state during writes demands substantial energy, posing a…
A coding scheme for write once memory (WOM) using polar codes is presented. It is shown that the scheme achieves the capacity region of noiseless WOMs when an arbitrary number of multiple writes is permitted. The encoding and decoding…
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell can take on q different levels corresponding to the number of electrons it contains. Increasing the cell level is easy; however, reducing a cell…
Write-Once-Memory (WOM) is a model for many modern non-volatile memories, such as flash memories. Recently, several capacity-achieving WOM coding schemes have been proposed based on polar coding. Due to the fact that practical computer…
Flash memory is well-known for its inherent asymmetry: the flash-cell charge levels are easy to increase but are hard to decrease. In a general rewriting model, the stored data changes its value with certain patterns. The patterns of data…
In this paper we give several new constructions of WOM codes. The novelty in our constructions is the use of the so called Wozencraft ensemble of linear codes. Specifically, we obtain the following results. We give an explicit construction…
Resistive memories have limited lifetime caused by limited write endurance and highly non-uniform write access patterns. Two main techniques to mitigate endurance-related memory failures are 1) wear-leveling, to evenly distribute the writes…
The read channel of a Flash memory cell degrades after repetitive program and erase (P/E) operations. This degradation is often modeled as a function of the number of P/E cycles. In contrast, this paper models the degradation as a function…