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STT-MRAM with interfacial-anisotropy-type perpendicular MTJ (IPMTJ) is a powerful candidate for the low switching energy design of STT-MRAM. In the literature, the reading operation of STT-MRAM structured with IPMTJs have been not studied…

Emerging Persistent Memory technologies (also PM, Non-Volatile DIMMs, Storage Class Memory or SCM) hold tremendous promise for accelerating popular data-management applications like in-memory databases. However, programmers now need to deal…

The integration of single-atom bits enables the realization of the highest data-density memory. Reading and writing information to these bits through mechanical interactions opens the possibility of operating the magnetic devices with low…

Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…

Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical…

Analog electronic non-volatile memories mimicking synaptic operations are being explored for the implementation of neuromorphic computing systems. Compound synapses consisting of ensembles of stochastic binary elements are alternatives to…

Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…

Recently demonstrated superconducting atom-chips provide a platform for trapping atoms and coupling them to solid-state quantum systems. Controlling these devices requires a full understanding of the supercurrent distribution in the…

As one of the most promising emerging non-volatile memory (NVM) technologies, spin-transfer torque magnetic random access memory (STT-MRAM) has attracted significant research attention due to several features such as high density, zero…

Nonvolatile devices based on the spin-orbit torque (SOT) mechanism are highly suitable for in-memory logic operations. The current objective is to enhance the memory density of memory cells while performing logic operations within the same…

Optical memristors represent a monumental leap in the fusion of photonics and electronics, heralding a new era of applications from neuromorphic computing to artificial intelligence. However, current technologies are hindered by complex…

Straintronic magneto-tunneling junction (s-MTJ) switches, whose resistances are controlled with voltage-generated strain in the magnetostrictive free layer of the MTJ, are extremely energy-efficient switches that would dissipate a few aJ of…

Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of…

This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic field and typical…

If a computer could be assembled from superconducting components, the energy efficiency would far surpass that of conventional electronics. Historic research efforts towards this goal yielded pivotal breakthroughs in the development and…

Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an…

There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation.…

Spin Transfer Torque Random Access Memory (STT-RAM) is an emerging Non-Volatile Memory (NVM) technology that has garnered attention to overcome the drawbacks of conventional CMOS-based technologies. However, such technologies must be…

A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite…