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Rotatable intelligent reflecting surface (IRS) introduces a new spatial degree of freedom (DoF) by dynamically adjusting orientations without the need of changing its elements' positions in real time. To unleash the full potential of…

Novel electronic systems forming at oxide interfaces comprise a class of new materials with a wide array of potential applications. A high mobility electron system forms at the LaAlO$_3$/SrTiO$_3$ interface and, strikingly, both…

Oxide heterostructures have shown rich physics phenomena, particularly in the conjunction of exotic insulator-metal transition (IMT) at the interface between polar insulator LaAlO3 and non-polar insulator SrTiO3 (LaAlO3/SrTiO3).…

We predict the giant ferroelectric control of interfacial properties of Ni/HfO2, namely, (i) the magnetocrystalline anisotropy and (ii) the inverse spin and orbital Rashba effects. The reversible control of magnetic properties using…

Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane…

Heavy metal/ferromagnet interfaces feature emergent spin-orbit effects absent in the bulk materials. Because of their inherent strong coupling between spin, charge and orbital degrees of freedom, such systems provide a platform for…

Since the 1960's when Gordon Moore proposed that the transistor density in our electronic devices should double every two years while the cost is halved, the semiconductor industry has taken this statement to heart. Over the last few…

This paper studies an Internet-of-Things (IoT) network employing a reconfigurable intelligent surface (RIS) over generalized fading channels. Inspired by the promising potential of RIS-based transmission, we investigate a RIS-enabled IoT…

Extensive theoretical and experimental work has established high-fidelity electron shuttling in Si/SiGe systems, whereas demonstrations in Si/SiO2 (SiMOS) remain at an early stage. To help address this, we perform full 3D simulations of…

Ultrathin two-dimensional (2D) electronic systems at the interfaces of layered materials are highly desirable platforms for exploring of novel quantum phenomena and developing advanced device applications. Here, we investigate ultrathin…

Semiconductor spin qubits may show significant device-to-device variability in the presence of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout or process inhomogeneities indeed shape the real space wave functions,…

The highly mobile electrons at the interface of SrTiO3 with other oxide insulators, such as LaAlO3 or AlOx, are of great current interest. A vertical gate voltage allows controlling a metal/superconductor-to-insulator transition, as well as…

The control of recently observed spintronic effects in topological-insulator/ferromagnetic-metal (TI/FM) heterostructures is thwarted by the lack of understanding of band structure and spin texture around their interfaces. Here we combine…

With the advent of sixth-generation networks, reconfigurable intelligent surfaces (RISs) have revolutionized wireless communications through dynamic electromagnetic wave manipulation, thereby facilitating the adaptability and unparalleled…

Given its ability to control and manipulate wireless environments, reconfigurable intelligent surface (RIS), also known as intelligent reflecting surface (IRS), has emerged as a key enabler technology for the six-generation (6G) cellular…

Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…

Innovative reconfigurable intelligent surface (RIS) technologies are rising and recognized as promising candidates to enhance 6G and beyond wireless communication systems. RISs acquire the ability to manipulate electromagnetic signals,…

There is steadily increasing evidence that the two-dimensional electron gas (2DEG) formed at the interface of some insulating oxides like LaAlO3/SrTiO3 and LaTiO3/SrTiO3 is strongly inhomogeneous. The inhomogeneous distribution of electron…

Surface properties of Co-doped BaFe2As2 epitaxial superconducting thin films were inspected by X-ray photoelectron spectroscopy, scanning spreading resistance microscopy (SSRM), and point contact spectroscopy (PCS). It has been shown that…

Cellular-connected unmanned aerial vehicles (UAVs) in 5G NR networks experience propagation and interference conditions that vary significantly with altitude and differ substantially from those experienced by terrestrial users. This is…