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We consider a reconfigurable intelligent surface (RIS) that can implement a phase rotation continuously over the whole surface rather than via a finite number of discrete elements. Such an RIS can be considered a design for future systems…
We investigate transport properties of gate-all-around Si nanowires using non-equilibrium Green's function technique. By taking into account of the ionized impurity scattering we calculate Green's functions self-consistently and examine the…
In this paper, we analyze the performance of a reconfigurable intelligent surface (RIS)-assisted multi-hop transmission by employing multiple RIS units to enable favorable communication for a mixed free-space optical (FSO) and…
Intelligent reflective surfaces (IRSs) are invoked for improving both spectral efficiency (SE) and energy efficiency (EE). Specifically, an IRS-aided multiple-input multiple-output network is considered, where the performance of randomly…
Accurate modeling of interconnect conductivity is important for performance evaluation of chips in advanced technologies. Surface scattering in interconnects is usually treated by using Fuchs-Sondheimer (FS) approach. While the FS model…
In this work, we investigate the performance of a dual-hop multiple relays system consisting of mixed Radio-Frequency (RF)/Free Space Optical (FSO) channels. The RF channels are subject to Rayleigh fading while the optical links experience…
In this paper, we investigate the use of intelligent reflecting surfaces (IRSs) (i.e., smart mirrors) to relax the line-of-sight requirement of free space optical (FSO) systems. We characterize the impact of the physical parameters of the…
Optical reconfigurable intelligent surface (ORIS) is an emerging technology that can achieve reconfigurable optical propagation environments by precisely adjusting signal's reflection and shape through a large number of passive reflecting…
We study the characteristics of scattering processes at step edges on the surfaces of Strong Topological Insulators (STI), arising from restrictions imposed on the $S$-matrix \emph{solely} by time reversal symmetry and translational…
Despite the promising gains, free-space optical (FSO) communication is severely influenced by atmospheric turbulence and pointing error issues, which make its practical design a bit challenging. In this paper, with the aim to increase the…
We investigate the effects of electron and acoustic-phonon confinement on the low-field electron mobility of thin square silicon nanowires (SiNWs) that are surrounded by SiO$_2$ and gated. We employ a self-consistent…
This letter proposes a novel mathematical framework for the statistical characterization of reconfigurable intelligent surface (RIS)-mounted high-altitude platform station (HAPS)-assisted MIMO systems over cascaded Rician fading channels.…
Quasi-two-dimensional electron systems (q-2DES) are formed in various hetero-structures, including oxide interfaces. Oxygen vacancies (OVs) in oxides like $\mathrm{SrTiO_3}$ are known to produce electronic carriers. A novel way to produce…
Surface damage caused by ionizing radiation in SiO$_2$ passivated silicon particle detectors consists mainly of the accumulation of a positively charged layer along with trapped-oxide-charge and interface traps inside the oxide and close to…
The integration of non-terrestrial networks (NTNs), which include high altitude platform (HAP) stations and intelligent reflecting surfaces (IRS) into communication infrastructures has become a crucial area of research to address the…
Reconfigurable intelligent surface (RIS) is an emerging technology for wireless communications. In this paper, extensive system level simulations are conducted for analyzing the performance of multi-RIS and multi-base-station (BS)…
SrHfO3 is a potential dielectric material for metal-oxide-semiconductor (MOS) devices. SrHfO3/GaAs interface has attracted attention due to its unique properties. In this paper, the interface properties of (001) SrHfO3/GaAs are investigated…
In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the channel mobility and threshold voltage stability in 4H-SiC…
A seemingly anomalous enhancement of electron mobility in strained silicon inversion layers at high sheet densities has exposed a conspicuous gap between device physics theory and experiment in recent years. We show that the root of this…
SrRuO3 (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO3. New oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO3 (Nb:STO). Using a three-terminal…