English

Scattering from Surface Step Edges in Strong Topological Insulators

Mesoscale and Nanoscale Physics 2015-03-13 v3 Materials Science

Abstract

We study the characteristics of scattering processes at step edges on the surfaces of Strong Topological Insulators (STI), arising from restrictions imposed on the SS-matrix \emph{solely} by time reversal symmetry and translational invariance along the step edge. We show that the `perfectly reflecting' step edge that may be defined with these restrictions allow modulations in the Local Density of States (LDOS) near the step edge to decay no slower than 1/x1/x, where xx is the distance from the step edge. This is faster than in 2D Electron Gases (2DEG) --- where the LDOS decays as 1/x1/\sqrt{x} --- and shares the same cause as the suppression of backscattering in STI surface states. We also calculate the scattering at a delta function scattering potential and argue that \emph{generic} step edges will produce a x3/2x^{-3/2} decay of LDOS oscillations. Experimental implications are also discussed.

Keywords

Cite

@article{arxiv.0912.4477,
  title  = {Scattering from Surface Step Edges in Strong Topological Insulators},
  author = {Rudro R. Biswas and Alexander V. Balatsky},
  journal= {arXiv preprint arXiv:0912.4477},
  year   = {2015}
}

Comments

4 pages, 3 figures; wording improved to emphasize the broad scope of our calculation.

R2 v1 2026-06-21T14:27:26.281Z