Related papers: Spin Transport in Hydrogenated Graphene
Using ab initio density functional theory and quantum transport calculations based on nonequilibrium Green's function formalism we study structural, electronic, and transport properties of hydrogen-terminated short graphene nanoribbons…
Motivated by recent experimental data (Sepioni, M. et al. Phys. Rev. Lett. 2010, 105, 207205), we have studied the possibility of forming magnetic clusters with spin S> 1/2 on graphene by adsorption of hydrogen atoms or hydroxyl groups.…
We study the effect of impurities in inducing spin-orbit coupling in graphene. We show that the sp3 distortion induced by an impurity can lead to a large increase in the spin-orbit coupling with a value comparable to the one found in…
In anisotropic crystals, the direction-dependent effective mass of carriers can have a profound impact on spin transport dynamics. The puckered crystal structure of black phosphorus (BP) leads to direction-dependent charge transport and…
The transport of charge and spin at finite energies is studied for the Hubbard chain in a magnetic field by means of the pseudoparticle perturbation theory. In the general case, this involves the solution of an infinite set of Bethe-ansatz…
We show that the extrinsic spin Hall effect can be engineered in monolayer graphene by decoration with small doses of adatoms, molecules, or nanoparticles originating local spin-orbit perturbations. The analysis of the single impurity…
Enhancing the spin-orbit interaction in graphene, via proximity effects with topological insulators, could create a novel 2D system that combines nontrivial spin textures with high electron mobility. In order to engineer practical…
We extend our recent result for the spin-relaxation time due to acoustic electron-phonon scattering in degenerate bands with spin mixing [New J. Phys. 18, 023012 (2015)] to include interactions with optical phonons, and present a numerical…
Establishing the conditions under which orbital, spin and lattice-pseudospin degrees of freedom are mutually coupled in realistic nonequilibrium conditions is a major goal in the emergent field of graphene spintronics. Here, we use…
Electrical spin injection and transport in silicon are central challenges for realizing semiconductor-based spintronic devices, particularly in p-type Si, where strong spin relaxation and interface effects often suppress detectable spin…
We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the…
We consider a two dimensional semiconductor with carriers subject to spin-orbit interactions and scattered by randomly distributed magnetic impurities. We solve the time-dependent Schroedinger equation to investigate the relationship…
Spin transport in electric conductors is largely determined by two material parameters - spin diffusion length and spin Hall angle. In metals, these are typically determined indirectly by probing magnetoresistance in magnet/metal…
Using a two-dimensional finite-differences scheme to model spin transport in silicon devices with lateral geometry, we simulate the effects of spin relaxation at interfacial boundaries, i.e. the exposed top surface and at an…
Spin waves are promising candidates to carry, transport, and process information. Controlling the propagation characteristics of spin waves in magnetic materials is an essential ingredient for designing spin-wave based computing…
We study spin-transport in bilayer-graphene (BLG), spin-orbit coupled to a tungsten di sulfide (WS$_2$) substrate, and measure a record spin lifetime anisotropy ~40-70, i.e. ratio between the out-of-plane $\tau_{\perp}$ and in-plane spin…
Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we…
The spin relaxation time of localized charge carriers is few orders of magnitude larger than that of free electrons and holes. Therefore mutual conversion of spin polarization, charge current and spin current turns out to be underlined in…
After the first unequivocal demonstration of spin transport in graphene (Tombros et al., 2007), surprisingly at room temperature, it was quickly realized that this novel material was relevant for both fundamental spintronics and future…
The spin accumulation in an n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 \mum thick n-GaAs channel with…