Related papers: Gate-tunable Memristive Phenonmena Mediated by Gra…
In this study, we design a reservoir computing (RC) network by exploiting short- and long-term memory dynamics in Au/Ti/MoS$_2$/Au memristive devices. The temporal dynamics is engineered by controlling the thickness of the Chemical Vapor…
Using memristive properties common for the titanium dioxide thin film devices, we designed a simple write algorithm to tune device conductance at a specific bias point to 1% relative accuracy (which is roughly equivalent to 7-bit precision)…
Memristor-based neuromorphic computing could overcome the limitations of traditional von Neumann computing architectures -- in which data are shuffled between separate memory and processing units -- and improve the performance of deep…
A memristor, a two-terminal nanodevice, has garnered substantial attention in recent years due to its distinctive properties and versatile applications. These nanoscale components, characterized by their simplicity of manufacture,…
In many cases, the behavior of physical memristive devices can be relatively well captured by using a single internal state variable. This study investigates the low-power control of first-order memristive devices to derive the most…
Memristors are promising devices for scalable and low power, in-memory computing to improve the energy efficiency of a rising computational demand. The crossbar array architecture with memristors is used for vector matrix multiplication…
The key feature of a memristor is that the resistance is a function of its previous resistance, thereby the behaviour of the device is influenced by changing the way in which potential is applied across it. Ultimately, information can be…
Grain boundaries (GB) profoundly influence the electrical properties of polycrystalline ionic solids. Yet, precise control of their transport characteristics has remained elusive, thereby limiting the performance of solid-state…
Memristors are nonlinear two-terminal circuit elements whose resistance at a given time depends on past electrical stimuli. Recently, networks of memristors have received attention in neuromorphic computing since they can be used as a tool…
Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization direction modulates the height of the Schottky barriers --…
Exotic features of a metal/oxide/metal (MOM) sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and…
By using the memristor's memory to both store a bit and perform an operation with a second input bit, simple Boolean logic gates have been built with a single memristor. The operation makes use of the interaction of current spikes…
Memristors are low-power memory-holding resistors thought to be useful for neuromophic computing, which can compute via spike-interactions mediated through the device's short-term memory. Using interacting spikes, it is possible to build an…
Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that…
Neuromorphic devices, with their distinct advantages in energy efficiency and parallel processing, are pivotal in advancing artificial intelligence applications. Among these devices, memristive transistors have attracted significant…
Memristive devices, whose resistance can be controlled by applying a voltage and further retained, are attractive as possible circuit elements for neuromorphic computing. This new type of devices poses a number of both technological and…
A new mechanism for memristive switching in 2D materials is through electric-field controllable electronic/structural phase transitions, but these devices have not outperformed status quo 2D memristors. Here, we report a high-performance…
The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical towards reducing the…
Grain boundaries (GBs) are ubiquitous in polycrystalline graphene materials obtained by various growth methods. It has been shown previously that considerable electrical transport gap can be opened by grain boundaries. On the other hand,…
We demonstrate that the electrical property of a single layer molybdenum disulfide (MoS2) can be significantly tuned from semiconducting to insulating regime via controlled exposure to oxygen plasma. The mobility, on-current and resistance…