Related papers: Gate-tunable Memristive Phenonmena Mediated by Gra…
During the study of resistive switching devices, researchers have found that the influence of the insertion layer cannot be ignored. Many reports have confirmed that the appropriate insertion layer can significantly improve the performance…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…
We present both an overview and a perspective of recent experimental advances and proposed new approaches to performing computation using memristors. A memristor is a 2-terminal passive component with a dynamic resistance depending on an…
Two-dimensional layered semiconductors have recently emerged as attractive building blocks for next-generation low-power non-volatile memories. However, challenges remain in the controllable sub-micron fabrication of bipolar resistively…
Memristors are an electronic device whose resistance depends on the voltage history that has been applied to its two terminals. Despite its clear advantage as a computational element, a suitable transport model is lacking for the special…
Practical memristor came into picture just few years back and instantly became the topic of interest for researchers and scientists. Memristor is the fourth basic two-terminal passive circuit element apart from well known resistor,…
Memristors are promising next-generation memory candidates that are nonvolatile, possess low power requirements and are capable of nanoscale fabrication. In this article we physically realise and describe the use of organic memristors in…
Charge-trap memory with high-\k dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials like graphene and MoS2 have been receiving much attention…
Monolithic three-dimensional integration of memory and logic circuits could dramatically improve performance and energy efficiency of computing systems. Some conventional and emerging memories are suitable for vertical integration,…
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices…
Memristive devices have been considered promising candidates for nature-inspired computing and in-memory information processing. However, experimental devices developed to date typically show significant variability and function at…
The memristive device is one of the basic elements of novel, brain-inspired, fast, and energy-efficient information processing systems in which there is no separation between memorization and information analysis functions. Since the first…
Synchronization of large spin Hall nano-oscillators (SHNO) arrays is an appealing approach toward ultra-fast non-conventional computing based on nanoscale coupled oscillator networks. However, for large arrays, interfacing to the network,…
While two-terminal HfOX (x<2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal environment on their performance. In this work,…
Reservoir computing has been considered as a promising intelligent computing paradigm for effectively processing complex temporal information. Exploiting tunable and reproducible dynamics in the single electronic device have been desired to…
Neuromorphic computing circuits can be realized using memristors based on low-dimensional materials enabling enhanced metal diffusion for resistive switching. Here, we investigate memristive properties of vertically aligned MoS$_2$…
Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit…
We report on resistive switching (RS) characteristics of W/WO3-x/Pt-based thin film memristors modulated by precisely controlled oxygen non-stoichiometry. RS properties of the devices with varied oxygen vacancy (VO) concentration have been…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…
Grain boundaries (GBs) are structural imperfections that typically degrade the performance of materials. Here we show that dislocations and GBs in two-dimensional (2D) metal dichalcogenides MX2 (M = Mo, W; X = S, Se) can actually improve…