Related papers: Straintronic spin-neuron
Spin-torque nano-oscillators (STNOs) are promising nanoscale microwave sources for spintronic applications, serving as signal generators or elements in neuromorphic computing systems. In this paper, we investigate the experimental…
Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…
Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…
Magnetic tunnel junctions (MTJs) are key elements in practical spintronics, enabling not only conventional tasks such as data storage, transmission, and processing but also the implementation of compute-in-memory processing elements,…
Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin-orbit coupling metals has the…
This paper introduces a new, highly energy-efficient, Adiabatic Capacitive Neuron (ACN) hardware implementation of an Artificial Neuron (AN) with improved functionality, accuracy, robustness and scalability over previous work. The paper…
We present the design and numerical simulation of a spiking neuron capable of on-chip machine learning. Built within the CMOS+X framework, the spiking neuron consists of an NMOS transistor combined with a magnetic tunnel junction (MTJ).…
A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…
Recent artificial neural network architectures improve performance and power dissipation by leveraging resistive devices to store and multiply synaptic weights with input data. Negative and positive synaptic weights are stored on the…
Magnetic skyrmions are particle-like topological spin configurations, which can carry binary information and thus are promising building blocks for future spintronic devices. In this work, we investigate the relationship between the…
Strain-controlled modulation of the magnetic switching behavior in magnetic tunnel junctions (MTJs) could provide the energy efficiency needed to accelerate the use of MTJs in memory, logic, and neuromorphic computing, as well as an…
Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin dependent thermoelectric properties of magnetic materials, novel means of…
Champions of spintronics often claim that spin based signal processing devices will vastly increase speed and/or reduce power dissipation compared to traditional charge based electronic devices. Yet, not a single spintronic device exists…
The desire to perform information processing, computation, communication, signal generation and related tasks, while dissipating as little energy as possible, has inspired many ideas and paradigms. One of the most powerful among them is the…
Spintronic artificial spiking neurons are promising due to their ability to closely mimic the leaky integrate-and-fire (LIF) dynamics of the biological LIF spiking neuron. However, the neuron needs to be reset after firing. Few of the…
The spiking neural network (SNN) using leaky-integrated-and-fire (LIF) neurons has been commonly used in automatic speech recognition (ASR) tasks. However, the LIF neuron is still relatively simple compared to that in the biological brain.…
In the brain, the membrane potential of many neurons oscillates in a subthreshold damped fashion and fire when excited by an input frequency that nearly equals their eigen frequency. In this work, we investigate theoretically the artificial…
Spin-transfer magnetic random access memory is of significant interest for cryogenic applications where a persistent, fast, low-energy consumption and high device density is needed. Here we report the low-temperature nanosecond duration…
We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ…
Artificial Neural Networks (ANNs) have found widespread applications in tasks such as pattern recognition and image classification. However, hardware implementations of ANNs using conventional binary arithmetic units are computationally…