Related papers: Carrier transport in reverse-biased graphene/semic…
W. Chr. Germs, K. Guo, R. A. J. Janssen, and M. Kemerink [1] recently measured the temperature and concentration dependent seebeck coefficient in organic thin film transistor and found the seebeck coefficient increases with carrier…
We investigate the conductance of normal-conductor/graphene/normal-conductor (NGN) junctions for arbitrary on-site potentials in the normal and graphitic parts of the system. We find that a ballistic NGN junction can display insulating…
We study heat transport and thermoelectric effects in two-dimensional superconductors in a magnetic field. These are modeled as granular Josephson-junction arrays, forming either regular or random lattices. We employ two different models…
In view of a study on spin-polarized photodiodes, the helicity-dependent photocurrent in a Fe/x-AlOx/p-GaAs Schottky diode is measured at room temperature by illuminating a circularly polarized light beam (785 nm) either horizontally on the…
Disorder at the etched edges of graphene quantum dots (GQD) enables random all-to-all interactions between localized charges in partially-filled Landau levels, providing a potential platform to realize the Sachdev-Ye-Kitaev (SYK) model. We…
Various mesoscopic devices exploit electrostatic side gates for their operation. In this paper, we investigate how voltage-biasing of graphene side gates modulates the electrical transport characteristics of graphene channel. We explore…
Using a semiclassical Boltzmann transport equation (BTE) approach, we derive analytical expressions for electric and thermoelectric transport coefficients of graphene in the presence and absence of a magnetic field. Scattering due to…
Using the non-equilibrium Green's functions formalism in a tight binding model, the spin-dependent transport in armchair graphene nanoribbon (GNR) structures controlled by a ferromagnetic gate is investigated. Beyond the oscillatory…
Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semi-metal transitions with reduction. The apparent…
Schottky barrier contact has been fabricated by thermal deposition of Al on (100) Ge (impurity concentration~1010/cm3 at 80K) that shows extrinsic p-type to intrinsic n-type transition near 180K. Both p and n-type Ge exhibits ideal Schottky…
The Seebeck effect consists in the induction of a voltage drop due to the temperature difference in a conductor. In the middle of XIXth century, Lord Kelvin has proposed a relation between the Seebeck coefficient and the derivative of the…
This study illustrates the nature of electronic transport and its transition from one mechanism to another between a metal electrode and MoS2 channel interface in a field effect transistor (FET) device. Interestingly, measurements of the…
We investigate electron transport across a complex oxide heterointerface of La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) on Nb:SrTiO$_3$ (Nb:STO) at different temperatures. For this, we employ the conventional current-voltage method as well as the…
Based on a tight-binding model and a recursive Green's function technique, spin-depentent ballistic transport through tinny graphene sheets (flakes) is studied. The main interest is focussed on: electrical conductivity, giant…
We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized Ti contacts on MoS2 form rectifying junctions with ~0.3 to…
In low-dimensional systems, the combination of reduced dimensionality, strong interactions, and topology has led to a growing number of many-body quantum phenomena. Thermal transport, which is sensitive to all energy-carrying degrees of…
We measured the low temperature subgap resistance of titanium nitride (superconductor, Tc=4.6K)/highly doped silicon (degenerated semiconductor) SIN junctions, where I stands for the Schottky barrier. At low energies, the subgap conductance…
Interlayer electron transport through a graphene / hexagonal boron-nitride (h-BN) / graphene heterostructure is strongly affected by the misorientation angle $\theta$ of the h-BN with respect to the graphene layers with different physical…
We study spin transport in forward and reverse biased junctions between a ferromagnetic metal and a degenerate semiconductor with a delta-doped layer near the interface at relatively low temperatures. We show that spin polarization of…
A systematic transport study of the ballistic electron emission microscopy (BEEM) of Au/Si(100) and Au/Si(111) Schottky barriers for different thicknesses of the metal layer and different temperatures is presented. It is shown that the…