Related papers: Spectral properties of a hybrid-qubit model based …
Spin qubits are very valuable and scalable candidates in the area of quantum computation and simulation applications. In the last decades, they have been deeply investigated from a theoretical point of view and realized on the scale of few…
The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum…
We theoretically consider the temporal dynamics of two coupled spin qubits (e.g., semiconductor quantum dots) driven by the inter-qubit spin-spin coupling. The presence of environmental noise (e.g., charge traps, nuclear spins, random…
We discuss an exactly solvable model Hamiltonian for describing the interacting electron gas in a quantum dot. Results for a spherical square well confining potential are presented. The ground state is found to exhibit striking oscillations…
The exact diagonalization technique is used to study many-particle properties of interacting electrons with spin, confined in a two-dimensional harmonic potential. The single-particle basis is limited to the lowest Landau level. The results…
Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit…
The design of electrically driven quantum dot devices for quantum optical applications asks for modeling approaches combining classical device physics with quantum mechanics. We connect the well-established fields of semi-classical…
Shuttling of single electrons in gate-defined silicon quantum dots is numerically simulated. A minimal gate geometry without explicit tunnel barrier gates is introduced, and used to define a chain of accumulation mode quantum dots, each…
Quantum gates (unitary gates) on physical systems are usually implemented by controlling the Hamiltonian dynamics. When full descriptions of the Hamiltonians parameters is available, the set of implementable quantum gates is easily…
As a possible physical realization of a quantum information processor, a system with stacked self-assembled InAs quantum dots buried in GaAs in adjacent to the channel of a spin field-effect transistor has been proposed. In this system,…
We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We…
A single electron spin in a double quantum dot in a magnetic field is considered in terms of a four-level system. By describing the electron motion between the potential minima by spin-conserving tunneling and spin flip caused by a…
The shifted 1/N expansion technique, used by El-Said (Phys. Rev. B 61, 13026 (2000)), to study the relative Hamiltonian of two interacting electrons confined in a quantum dot, is investigated. El-Said's results from SLNT are revised and…
The orbital, spin and valley degrees of freedom in silicon quantum dots support many modes of spin qubit operation. However, it is generally challenging to obtain information about the energy level spectrum over large ranges of parameter…
We present a study of the one dimensional Su-Schrieffer-Heeger model Hamiltonian by a diagrammatic perturbative method in the weak electron-phonon coupling regime. Exact computation of both the charge carrier effective mass and the electron…
Strongly-coupled quantum dot molecules (QDMs) are widely deployed in the design of a variety of optoelectronic, photovoltaic, and quantum information devices. An efficient and optimized performance of these devices demands engineering of…
The energy levels of two interacting electrons in a 2D quantum dot confined by a finite Gaussian potential and subjected to a uniform magnetic field perpendicular to the plane of the dot are studied. Analytic results are obtained for the…
Electrons trapped above the surface of helium provide a means to study many-body physics free from the randomness that comes from defects in other condensed-matter systems. Localizing an electron in an electrostatic quantum dot makes its…
We present a set of concrete and realistic ideas for the implementation of a small-scale quantum computer using electron spins in lateral GaAs/AlGaAs quantum dots. Initialization is based on leads in the quantum Hall regime with tunable…
We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to map…