Related papers: Suppressing twin formation in Bi2Se3 thin films
We study the properties of a thin film of topological insulator material. We treat the coupling between helical states at opposite surfaces of the film in the properly-adapted tunneling approximation, and show that the tunneling matrix…
We have reproducibly grown near-single-domain superconducting aluminum (Al) films on GaAs(111)A wafers using molecular beam epitaxy. Synchrotron X-ray diffraction revealed twin-domain ratios of 0.00005 and 0.0003 for 19.4-nm- and…
Topological insulators are a new class of materials, that exhibit robust gapless surface states protected by time-reversal symmetry. The interplay between such symmetry-protected topological surface states and symmetry-broken states (e.g.…
Several proposed applications and exotic effects in topological insulators rely on the presence of helical Dirac states at the interface between a topological and a normal insulator. In the present work, we have used low-energy…
InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M bar high symmetry point. This demonstrates a…
High quality thin films of the topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ have been deposited on SrTiO$_3$ (111) by molecular beam epitaxy. Their electronic structure was investigated by in situ angle-resolved photoemission…
Recently, it was shown that quantum spin Hall insulator (QSHI) phase with a gap wide enough for practical applications can be realized in the ultra thin films constructed from two inversely stacked structural elements of trivial band…
The interface and electronic structure of thin (~20-74 nm) Co3O4(110) epitaxial films grown by oxygen-assisted molecular beam epitaxy on MgAl2O4(110) single crystal substrates have been investigated by means of real and reciprocal space…
Intrinsic magnetic topological insulators have emerged as a promising platform to study the interplay between topological surface states and ferromagnetism. This unique interplay can give rise to a variety of exotic quantum phenomena,…
Films of Bi$\rm _2$Sr$\rm _2$CaCu$\rm _2$O$\rm _8$ and Bi$\rm _2$Sr$\rm _2$CuO$\rm _6$ have been grown using Atomic-Layer-by-Layer Molecular Beam Epitaxy (ALL-MBE) on lattice-matched substrates. These materials have been combined with…
Due to high density of native defects, the prototypical topological insulator (TI), Bi$_2$Se$_3$, is naturally n-type. Although Bi$_2$Se$_3$ can be converted into p-type by substituting 2+ ions for Bi, only light elements such as Ca have…
Structural and magnetic properties of Mn5(SixGe1-x)3 thin films were investigated. Ferromagnetic Mn5Ge3 and anti-ferromagnetic Mn5Si3 thin films have been synthesized and characterized as these compounds exhibit interesting features for the…
We report on infrared (IR) optical experiments on Bi$_2$Te$_3$ and Mn-doped Bi$_2$Te$_3$ epitaxial thin films. In the latter film, dilute Mn doping (4.5\%) of the topologically nontrivial semiconductor host results in…
The challenge of parasitic bulk doping in Bi-based 3D topological insulator materials is still omnipresent, especially when preparing samples by molecular beam epitaxy (MBE). Here, we present a heterostructure approach for epitaxial BSTS…
The electrical conductance of molecular beam epitaxial Bi on BaF2(111) was measured as a function of both film thickness (4-540 nm) and temperature (5-300 K). Unlike bulk Bi as a prototype semimetal, the Bi thin films up to 90 nm are found…
In this study, high-quality thin films of the topological semimetal phase NiTe$_2$ were prepared using molecular beam epitaxy (MBE) technique, confirmed through X-ray diffraction with pronounced Laue oscillations. Electrical transport…
Many proposals to generate a time-reversal invariant topological superconducting phase are based on imposing a $\pi$ phase difference between the superconducting leads proximitizing a nanostructure. We show that this phase can be induced on…
We investigate the band dispersion and the spin texture of topologically protected surface states in the bulk topological insulators Bi2Se3 and Bi2Te3 by first-principles methods. Strong spin-orbit entanglement in these materials reduces…
Several small-bandgap semiconductors are now known to have protected metallic surface states as a consequence of the topology of the bulk electron wavefunctions. The known "topological insulators" with this behavior include the important…
Using scanning tunnel microscopy (STM), we investigate the superconductivity and vortex properties in topological insulator Bi$_{2}$Te$_{3}$ thin films grown on the iron-based superconductor FeTe$_{0.55}$Se$_{0.45}$. The proximity-induced…