Related papers: Processing and characterization of epitaxial GaAs …

We designed and fabricated an epitaxial-graphene-channel field-effect transistor (EG-FET) featured by the asymmetric dual-grating-gate (ADGG) structure working for a current-driven terahertz detector, and experimentally demonstrated a 10-ps…

We report ultrafast transient-grating measurements, above and below the Curie temperature, of the dilute ferromagnetic semiconductor (Ga,Mn)As containing 6% Mn. At 80 K (15 K), we observe that photoexcited electrons in the conduction band…

We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy method, and obtained the geometries of the dots from scanning transmission electron microscopy data. Post-thermal annealing is essential for the optical activation of quantum dots…

We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam…

Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the…

We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP and Ge in THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of…

We studied time resolution and response power dependence of three terahertz detectors based on significantly different types of field effect transistors. We analyzed the photoresponse of custom-made Si junctionless FETs, Si MOSFETs and…

The low gain avalanche detectors (LGADs) are thin sensors with fast charge collection which in combination with internal gain deliver an outstanding time resolution of about 30 ps. High collision rates and consequent large particle rates…

The methodology for a heterodyned laser-induced transient thermal grating technique for non-contact, non-destructive measurements of thermal transport in opaque material is presented. Phase-controlled heterodyne detection allows us to…

In this paper we report on the optical properties of site controlled InGaAs dots with GaAs barriers grown in pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of…

A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A fast detector that is sensitive and able to resolve both near-infrared and Terahertz pulses at the same time is highly desirable. Here we present…

In this paper we present the first measurement of a Gallium Arsenide (GaAs) crystal as a scintillating calorimeter with dual heat and light readout within the DAREDEVIL project. The experimental setup features a 4.3 g GaAs (GaAs-1) crystal,…

High-critical-temperature (Tc) superconductivity at 48 K is reported for hydrogen-doped SmFeAsO epitaxial films on MgO single-crystal substrates. The key processes are pulsed laser deposition to grow undoped SmFeAsO epitaxial films and…

Epitaxially-grown superconductor/dielectric/superconductor trilayers have the potential to form high-performance superconducting quantum devices and may even allow scalable superconducting quantum computing with low-surface-area qubits such…

We report on a process that enables the removal of II-VI semiconductor epilayers from their GaAs growth substrate and their subsequent transfer to arbitrary host environments. The technique combines mechanical lapping and layer selective…

Germanium quantum well heterostructures have rapidly emerged as a leading platform for solid-state quantum information processing; however, material quality limits scalability, and higher structural quality, higher purity, as well as zero…

We report on wavelength-sized GaAs optomechanical disk resonators showing ultra-strong optomechanical interaction. We observe optical transduction of a disk mechanical breathing mode with 1.4 GHz frequency and effective mass of ~ 2 pg. The…

Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after…

Active edge p-on-p silicon pixel detectors with thickness of 100 $\mu$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and…

Ba(Fe1-xCox)2As2 superconducting thin films have been grown on SrTiO3, (La,Sr)(Al,Ta)O3, LaAlO3 and YAlO3 (YAO) single crystal substrates by pulsed laser deposition. All the films, except on YAO, have been grown epitaxially without buffer…