Related papers: Antenna-coupled photon emission from hexagonal bor…
Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the near-bandedge emission. The resonant surface plasmon coupling led to a significant enhancement in the exciton decay rate and the…
Optically active defects in hexagonal boron nitride (hBN) have become amongst the most attractive single-photon emitters in the solid state, owing to their high-quality photophysical properties, combined with the unlimited possibilities of…
We show that GdN nanoislands can enhance inter-band tunneling in GaN PN junctions by several orders of magnitude, enabling low optical absorption low-resistance tunnel junctions (specific resistivity 1.3 X 10-3 {\Omega}-cm2) for various…
Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive and active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for…
InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer…
The photoelectron spectrum in the ultra-relativistic limit of tunneling ionization is strongly affected by wave-particle resonance and finite spot-size effects, in contradistinction with the usual assumptions of strong field physics. Near…
Free electrons are unique tools to probe and manipulate nanoscale optical fields with emerging applications in ultrafast spectromicroscopy and quantum metrology. However, advances in this field are hindered by the small probability…
Defect centers in wide-band-gap crystals attracted considerable attention due to the realisations of qubits, sensors, or single photon emitters at room temperature. The family of these centers is constantly growing, including well-known…
Ultrafast electron pulses, combined with laser-pump and electron-probe technologies, allow for various forms of ultrafast microscopy and spectroscopy to elucidate otherwise challenging to observe physical and chemical transitions. However,…
Defect centers in hexagonal boron nitride represent room-temperature single-photon sources in a layered van der Waals material. These light emitters appear with a wide range of transition energies ranging over the entire visible spectrum,…
Simulations of metal nanopatterns embedded in a thin photovoltaic absorber show significantly enhanced absorbance within the semiconductor, with a more than 300% increase for {\lambda} = 800 nm. Integrating with AM1.5 solar irradiation,…
Low-dimensional semiconductors have been widely exploited in thermoelectric energy conversion for high efficiencies due to their suppressed lattice thermal conduction, sharply defined electronic density of states, and tunable…
Spatial and temporal light modulation is a well-established technology that enables dynamic shaping of the phase and amplitude of optical fields, significantly enhancing the resolution and sensitivity of imaging methods. Translating this…
Enhanced interband tunnel injection of holes into a PN junction is demonstrated using P-GaN/InGaN/N-GaN tunnel junctions with a specific resistivity of 1.2 X 10-4 {\Omega} cm2. The design methodology and low-temperature characteristic of…
The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an…
Nanophotonics research has focused recently on the ability of non-linear optical processes to mediate and transform optical signals in a myriad of novel devices, including optical modulators, transducers, color filters, photodetectors,…
Flatbands emerge from a myriad of structures such as Landau levels, Lieb and Kagome lattices, linegraphs, and more recently moire superlattices. They enable unique properties including slow light in photonics, correlated phases in…
Driven by the prospects of higher bandwidths for optical interconnects, integrated modulators involving materials beyond those available in silicon manufacturing increasingly rely on the Pockels effect. For instance, wafer-scale bonding of…
Atomic sized plasmonic tunnel junctions are of fundamental interest, with great promise as the smallest on-chip light sources in various optoelectronic applications. Several mechanisms of light emission in electrically driven plasmonic…
Optical switches are one of the most important elements of integrated photonics. Here, we designed, fabricated and characterized several nanophotonic optical switches (NOSs) in silicon that exhibit ultra-compact footprint, along with…