Related papers: Atomic origin of high temperature electron trappin…
We demonstrate continuous Sisyphus cooling combined with a continuous loading mechanism used to efficiently slow down and accumulate atoms from a guided beam. While the loading itself is based on a single slowing step, applying a radio…
We study the motion of two atoms trapped at distant positions in the field of a driven standing wave high-Q optical resonator. Even without any direct atom-atom interaction the atoms are coupled through their position dependent influence on…
Silicon photonics promises to alleviate the bandwidth bottleneck of modern day computing systems. But silicon photonic devices have the fundamental problem of being highly sensitive to ambient temperature fluctuations due to the high…
Recently an air-stable layered semiconductor Bi2O2Se was discovered to exhibit an ultrahigh mobility in transistors fabricated with its thin layers. In this work, we explored the mechanism that induces the high mobility and distinguishes…
We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin temperatures. Recent experiments in electron quantum dots have…
High bias electrical transport characteristics of freely suspended metallic single-walled carbon nanotubes (SWNTs) are investigated at 250-400K in vacuum and various gases. Self-heating is exploited to examine the temperature dependence of…
We have measured magnetic trap lifetimes of ultra-cold Rb87 atoms at distances of 5-1000 microns from surfaces of conducting metals with varying resistivity. Good agreement is found with a theoretical model for losses arising from…
Understanding defects in atomically thin van der Waals (vdW) semiconductors is essential for advancing their use in next-generation optoelectronic and photovoltaic devices. Here, we apply a combination of various impedance spectroscopy…
The measurements of the high - temperature current - voltage characteristics of MoS2 thin - film transistors show that the devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased…
Lately, there has been much interest in high temperature superconductors, and more recently hydrogen-based superconductors. This work offers a simple model which explains the behavior of the superconducting gap based on BCS theory, and…
The dynamics of open quantum systems connected with several reservoirs attract great attention due to its importance in quantum optics, biology, quantum thermodynamics, transport phenomena, etc. In many problems, the Born approximation is…
HoSbTe was predicted to be a weak topological insulator, whose spin-orbit coupling (SOC) gaps are reported to be as large as hundreds of meV. Utilizing infrared spectroscopy, we find that the compound is of metallic nature from 350 K down…
Here, we report an alternative route to achieve two dimensional electron gas (2DEG) in a semiconductor structure. It has been shown that charge accumulation on the side facets can lead to the formation of 2DEG in a network of c-axis…
Electrons and holes can spontaneously form excitons and condense in a semimetal or semiconductor, as predicted decades ago. This type of Bose condensation can happen at much higher temperatures in comparison with dilute atomic gases.…
Understanding carrier trapping in solids has proven key to semiconductor technologies but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here,…
Efficient heat dissipation to the substrate is crucial for optimal device performance in nanoelectronics. We develop a theory of electronic thermal boundary conductance (TBC) mediated by remote phonon scattering for the single-layer…
We fabricated NiFe$_\textrm{2}$O$_\textrm{x}$ thin films on MgAl$_2$O$_4$(001) substrates by reactive dc magnetron co-sputtering varying the oxygen partial pressure during deposition. The fabrication of a variable material with oxygen…
The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Such limitations could be particularly severe for two-dimensional (2D) semiconductors integrated with flexible substrates or…
We present measurements of trapped-ion motional-state heating rates in niobium and gold surface-electrode ion traps over a range of trap-electrode temperatures from approximately 4 K to room temperature (295 K) in a single apparatus. Using…
Hafnium dioxide, also known as hafnia, is an extremely sought-after material in opto- and nanoelectronics for creating optical coatings and various functional media to have stable performance characteristics under varying thermal operating…