Related papers: ReS2-based field-effect transistors and photodetec…
Two-dimensional materials, specifically transition metal dichalcogenides, for highly sensitive gas sensing are emerging as effective detection technology. Platinum ditelluride (PtTe2) is an intriguing material in the realm of field-effect…
Photoexcitation has been utilized to control quantum matter and to uncover metastable phases far from equilibrium. Among demonstrations to date, the most common is the photo-induced transition from correlated insulators to metallic states;…
Transition metal dichalcogenides (TMDCs) belong to technologically important compounds. We have explored the structural, elastic, bonding, optoelectronic and some thermo-physical properties of ZrX2 (X = S, Se, Te) TMDCs in details via…
Achieving low contact resistance in advanced quantum electronic devices remains a critical challenge. With the growing demand for faster and energy-efficient devices, 2D contact engineering offers a promising solution. Beyond graphene,…
Ultrafast light-matter interaction has emerged as a powerful tool to control and probe the macroscopic properties of functional materials, especially two-dimensional transition metal dichalcogenides which can form different structural…
We present a physics-based compact model for two-dimensional (2D) field-effect transistors (FETs) based on monolayer semiconductors such as MoS2. A semi-classical transport approach is appropriate for the 2D channel, enabling simplified…
We demonstrate the field-effect transistor (FET) operation of molecularly-thin anatase phase produced through solid state transformation from Ti0.87O2 nanosheets. Monolayer Ti0.87O2 nanosheet with a thickness of 0.7 nm is two-dimensional…
Heterostructures of two-dimensional (2D) transition metal dichalcogenides (TMDs) and inorganic semiconducting zero-dimensional (0D) quantum dots (QDs) offer unique charge and energy transfer pathways which could form the basis of novel…
A small-signal equivalent circuit of 2D-material based field-effect transistors is presented. Charge conservation and non-reciprocal capacitances have been assumed so the model can be used to make reliable predictions at both device and…
Many two-dimensional (2D) semiconductors represented by transition metal dichalcogenides have tunable optical bandgaps in the visible or near IR-range standing as a promising candidate for optoelectronic devices. Despite this potential,…
Hybrid heterostructure based phototransistors are attractive owing to their high gain induced by photogating effect. However, the absence of an in-plane built-in electric field in the single channel layer transistor results in a relatively…
Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular doping technique which greatly reduces the contact…
Atomically thin polycrystalline transition-metal dichalcogenides (TMDs) are relevant to both fundamental science investigation and applications. TMD thin-films present uniquely difficult challenges to effective nanoscale crystalline…
The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data processing and multivariable optimization. Ferroelectric materials…
Two-dimensional molybdenum disulfide (MoS2) is an excellent channel material for ultra-thin field effect transistors. However, high contact resistance across the metal-MoS2 interface continues to limit its widespread realization. Here,…
We present an ultrasensitive technique for probing transient optical changes in atomically thin molybdenum disulfide (MoS$_2$) layers integrated onto silicon nitride (Si$_3$N$_4$) ring resonators. The MoS$_2$ is illuminated by a femtosecond…
Nonlinear frequency conversion provides essential tools for light generation, photon entanglement, and manipulation. Transition metal dichalcogenides (TMDs) possess huge nonlinear susceptibilities and 3R-stacked TMD crystals further combine…
We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of…
Two-dimensional transition metal dichalcogenides (TMDs) represent an ideal testbench for the search of materials by design, because their optoelectronic properties can be manipulated through surface engineering and molecular…
We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device…