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Related papers: Strain induced mobility modulation in single-layer…

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Strain engineering can modulate the material properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron…

First principles density functional theory based calculations have been performed to investigate the strain and temperature induced tunability of the thermoelectric properties of monolayer (ML) MoS$_2$. Modifications in the electronic and…

Materials Science · Physics 2023-08-02 Saumen Chaudhuri , Amrita Bhattacharya , A. K. Das , G. P. Das , B. N. Dev

Strain engineering has arisen as a powerful technique to tune the electronic and optical properties of two-dimensional semiconductors like molybdenum disulfide (MoS2). Although several theoretical works predicted that biaxial strain would…

Applied Physics · Physics 2021-05-11 Felix Carrascoso , Riccardo Frisenda , Andres Castellanos-Gomez

Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also…

Materials Science · Physics 2022-10-07 Isha M. Datye , Alwin Daus , Ryan W. Grady , Kevin Brenner , Sam Vaziri , Eric Pop

In the present work we calculate the phonon-limited mobility in intrinsic n-type single-layer MoS2 as a function of carrier density and temperature for T > 100 K. Using a first-principles approach for the calculation of the electron-phonon…

Materials Science · Physics 2013-11-22 Kristen Kaasbjerg , Kristian S. Thygesen , Karsten W. Jacobsen

The sensitive dependence of electronic and thermoelectric properties of MoS$_2$ on the applied strain opens up a variety of applications in the emerging area of straintronics. Using first principles based density functional theory…

Materials Science · Physics 2015-06-22 Swastibrata Bhattacharyya , Tribhuwan Pandey , Abhishek K. Singh

Molecular dynamics simulations are performed to investigate the buckling of single-layer MoS2 under uniaxial compression. The strain rate is found to play an important role on the critical buckling strain, where higher strain rate leads to…

Materials Science · Physics 2015-04-14 Jin-Wu Jiang

The production of new sensors, transducers and electronic components can benefit from the possibility to alter the electronic transport of metal-semicondutor-metal (MSM) devices. 2D materials are extremely appealing for those new…

Materials Science · Physics 2018-07-04 Igor Neri , Miquel López-Suárez

Strain engineering is a very effective method to continuously tune the electronic, topological, optical and thermoelectric properties of materials. In this work, strain-dependent phonon transport of recently-fabricated antimonene (Sb…

Materials Science · Physics 2017-08-02 Ai-Xia Zhang , Jiang-Tao Liu , San-Dong Guo

The doping and strain effects on the electron transport of monolayer MoS_2 are systematically investigated using the first-principles calculations with Boltzmann transport theory. We estimate the mobility has a maximum 275 cm^2/(Vs) in the…

Materials Science · Physics 2014-12-10 Yanfeng Ge , Wenhui Wan , Wanxiang Feng , Di Xiao , Yugui Yao

The extraordinary mechanical properties of 2D TMDCs make them ideal candidates for investigating strain-induced control of various physical properties. Here we explore the role of non-uniform strain in modulating optical, electronic and…

Strain provides an effective means to tune the electrical properties while retaining the native chemical composition of the material. Unlike three-dimensional solids, two-dimensional materials withstand higher levels of elastic strain…

Mesoscale and Nanoscale Physics · Physics 2020-04-14 Ashby Phillip John , Arya Thenapparambil , Madhu Thalakulam

We present a computational study on the impact of tensile/compressive uniaxial ($\varepsilon_{xx}$) and biaxial ($\varepsilon_{xx}=\varepsilon_{yy}$) strain on monolayer MoS$_{2}$ NMOS and PMOS FETs. The material properties like band…

Mesoscale and Nanoscale Physics · Physics 2013-08-02 Amretashis Sengupta , Ram Krishna Ghosh , Santanu Mahapatra

Single-layer MoS2 is a direct-gap semiconductor whose electronic band structure strongly depends on the strain applied to its crystal lattice. While uniaxial strain can be easily applied in a controlled way, e.g., by bending of a flexible…

Mesoscale and Nanoscale Physics · Physics 2015-10-01 G. Plechinger , A. Castellanos-Gomez , M. Buscema , H. S. J. van der Zant , G. A. Steele , A. Kuc , T. Heine , C. Schüller , T. Korn

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ…

We perform micro-photoluminescence and Raman experiments to examine the impact of biaxial tensile strain on the optical properties of WS2 monolayers. A strong shift on the order of -130 meV per % of strain is observed in the neutral exciton…

Molybdenum disulfide (MoS$_2$) has attracted interest owing to its strain-tuned electronic and optical properties, making it a promising candidate for applications in strain engineering devices. In this study, we investigate the effect of…

Materials Science · Physics 2024-01-26 A. Setiawan , I. P. Handayani , E. Suprayoga

Two-dimensional transition metal dichalcogenides show great potential as promising thermoelectric materials due to their lower dimensionality, the unique density of states and quantum confinement of carriers. The effect of mechanical strain…

Computational Physics · Physics 2019-05-28 Jayanta Bera , Satyajit Sahu

Strain engineering is a very effective method to tune electronic, optical, topological and thermoelectric properties of materials. In this work, we systematically study biaxial strain dependence of electronic structures and thermoelectric…

Materials Science · Physics 2016-07-19 San-Dong Guo , Lun Zhang

Thermal transport property of homogeneous twisted molybdenum disulfide (MoS$_2$) is investigated using non-equilibrium molecular dynamics simulations with the state-of-art force fields. The simulation results demonstrate that the…

Computational Physics · Physics 2023-10-16 Wenwu Jiang , Ting Liang , Jianbin Xu , Wengen Ouyang
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