Related papers: Multiple State EFN Transistors
We study gated field effect transistors (FETs) with an eccentric Corbino-disk geometry, such that the drain spans its circumference while the off-center inner ring acts as a source. An AC THz potential difference is applied between source…
Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The…
We propose to operate a superconducting transition edge sensor (TES) using a different type of biasing, in which the resistance of the TES is kept constant by means of feedback on the bias voltage and is independent of the incoming signal…
Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often…
The latest field-effect transistors are entering the regime where quantum effects within the conduction channel can play a significant role because of the increasingly reduced dimensions. We investigate the effects of quantized states in…
Gas sensors built using two-dimensional (2D) MoS2 have conventionally relied on a change in field-effect-transistor (FET) channel resistance or a change in Schottky contact/pn homojunction barrier. This report demonstrates, for the first…
The recent experiment [Y. Wang et al., Science 366, 1125 (2019)] on magnon-mediated spin-transfer torque (MSTT) was interpreted in terms of a picture where magnons are excited within an antiferromagnetic insulator (AFI), by applying…
Fluctuations are strong in mesoscopic systems and have to be taken into account for the description of transport. We show that they can even be used as a resource for the operation of a system as a device. We use the physics of…
Electron transmission through nanosystems is blocked if there are no states connecting the left and the right reservoir. Electron-electron scattering can lift this blockade and we show that this feature can be conveniently implemented by…
Metal-mediated exfoliation has been demonstrated as a promising approach for obtaining large-area flakes of 2D materials to fabricate prototypical nanoelectronics. However, several processing challenges related to organic contamination at…
We have developed a novel system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. Within…
Self-assembled functionalized nano particles are at the focus of a number of potential applications, in particular for molecular scale electronics devices. Here we perform experiments of self-assembly of 10 nm Au nano particles (NPs),…
We present an analytical device model for a field-effect transistor based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrate (the back gate) and the top gate controlling the…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
Recent studies demonstrate that an individual magnetic domain wall (DW) can be trapped and reproducibly positioned within multiterminal (Ga,Mn)As microdevices. The electrical resistance obtained from such measurements is found to be…
Graphene field-effect transistors exhibit negligible transconductance under two scenarios: for any gate-to-source voltage when the drain-to-source voltage is set to zero, and for an arbitrary drain-to-source voltage provided that the…
Mobile devices, climate science, and autonomous vehicles all require advanced microwave antennas for imaging, radar, and wireless communications. The cost, size, and power consumption of existing technology, however, has hindered the…
A magnetic-field-effect transistor is proposed that generates a spin-polarized current and exhibits a giant negative magnetoresitance. The device consists of a nonmagnetic conducting channel (wire or strip) wrapped, or sandwiched, by a…
We argue that twisted graphene nanoribbons subjected to a transverse electric field can operate as a variety of nanoelectronic devices, such as tunable tunnel diodes with current-voltage characteristics controlled by the transverse field.…
We examine transport through a quantum dot coupled to three ferromagnetic leads in the regime of weak tunnel coupling. A finite source-drain voltage generates a nonequilibrium spin on the otherwise non-magnetic quantum dot. This spin…