Related papers: Spin-valve Effect in NiFe/MoS2/NiFe Junctions
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently been shown to demonstrate non-volatile resistive switching (NVRS), offering significant advantages such as high-density integration and low energy consumption due to…
Motivated by the triumph and limitation of graphene for electronic applications, atomically thin layers of group VI transition metal dichalcogenides are attracting extensive interest as a class of graphene-like semiconductors with a desired…
The spin valve effect for the superconducting current based on the superconductor/ferromagnet proximity effect has been studied for a CoO_x/Fe1/Cu/Fe2/Cu/Pb multilayer. The magnitude of the effect $\Delta T_c$ = T_c^{AP} - T_c^{P}, where…
Realization of noncentrosymmetric magnetic Weyl metals is expected to exhibit anomalous transport properties stemming from the interplay of unusual bulk electronic topology and magnetism. Here, we present spin-valve-like magnetoresistance…
Spin-orbit torques (SOTs) from transition metal dichalcogenides systems (TMDs) in conjunction with ferromagnetic materials are recently attractive in spintronics for their versatile features. However, most of the previously studied…
The outstanding optoelectronic and valleytronic properties of transition metal dichalcogenides (TMDs) have triggered intense research efforts by the scientific community. An alternative to induce long-range ferromagnetism (FM) in TMDs is by…
Improving carrier mobilities of two-dimensional (2D) semiconductors is highly sought after. Recently, Ng. et al. [1] reported rippled molybdenum disulfide (MoS$_2$) transistors on bulged silicon nitride (SiN$_x$) substrates that exhibit…
We present a detailed study of the spin-torque diode effect in CoFeB/MgO/CoFe/NiFe magnetic tunnel junctions. From the evolution of the resonance frequency with magnetic field at different angles, we clearly identify the free-layer mode and…
Semiconductor Bi$_2$O$_2$Se nanolayers of high crystal quality have been realized via epitaxial growth. These two-dimensional (2D) materials possess excellent electron transport properties with potential application in nanoelectronics. It…
Atomically thin materials, like semiconducting transition metal dichalcogenides (S-TMDs), are highly sensitive to the environment. This opens up an opportunity to externally control their properties by changing their surroundings. We…
Transition metal dichalcogenides (TMD) are currently among the most interesting two-dimensional (2D) materials due to their outstanding properties. MoTe2 involves attractive polymorphic TMD crystals which can exist in three different 2D…
Using density functional theory calculations and the Greens's function formalism, we report the existence of magnetic edge states with a non-collinear spin texture present on different edges of the 1T' phase of the three monolayer…
Understanding the origin of valence band maxima (VBM) splitting in transition metal dichalcogenides (TMDs) is important because it governs the unique spin and valley physics in monolayer and multilayer TMDs. In this work, we present our…
In this paper we analyze spin waves in bilayers of two-dimensional van der Waals materials, like Vanadium based dichalcogenides, VX$_2$ (X=S, Se, Te) and other materials of similar symmetry. We assume that the materials exhibit…
Due to their physical properties and potential applications in energy conversion and storage, transition metal dichalcogenides (TMDs) have garnered substantial interest in recent years. Amongst this class of materials, TMDs based on…
We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs…
Two channels of the sd exchange interaction are considered in magnetic junctions. The first channel describes the interaction of transversal spins with the lattice magnetization. The second one describes the interaction of longitudinal…
The production of new sensors, transducers and electronic components can benefit from the possibility to alter the electronic transport of metal-semicondutor-metal (MSM) devices. 2D materials are extremely appealing for those new…
Spin-singlet Cooper pairs consisting of two electrons with opposite spins cannot directly penetrate from a superconductor to a half-metal (fully spin polarized ferromagnets) which blocks the superconducting proximity effect between these…
We studied the effect of inserting 0.5 nm-thick spacer layers (Ti, V, Cr, Mo, W) at the Pt/Co interface on the spin-orbit torques, Hall effect, magnetoresistance, saturation magnetization, and magnetic anisotropy. We find that the…