Related papers: Hexagonal AlN: Dimensional-Crossover-Driven Bandga…
In this paper, we have built a numerical p-n Si/GaAs heterojunction model using a quantum-mechanical tunneling theory with various quantum tunneling interfacial materials including two-dimensional semiconductors such as hexagonal boron…
Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals…
Nonlinear acoustic metamaterial (NAM) initiates new fields for controlling elastic waves. In this work, the flexural wave propagation in the half-infinite NAM beam consisting of periodic Duffing resonators is reported by considering the…
We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double heterostructure FETs exhibit a two- dimensional electron gas…
AlP and GaN are wide band-gap semiconductors (SC) uses in opto-electronic industry as light emitting diodes. Here we investigate it as future perspective candidate for insulating barrier in magnetic tunnel junctions. We employ density…
In this work we present a comparison of multiband k.p-models, the effective bond-orbital approach, and an empirical tight-binding model to calculate the electronic structure for the example of a truncated pyramidal GaN/AlN self-assembled…
In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct bandgap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show…
We use density functional theory based first-principles method to investigate the bandstructure and phase stability in the laterally grown hexagonal C$_x$(BN)$_{1-x}$, two-dimensional Graphene and $h$-BN hybrid nanomaterials, which were…
We design and demonstrate selective injection GaN heterojunction bipolar transistors that utilize a patterned base for selective injection of electrons from the emitter. The design maneuvers minority carrier injection through a thin p-GaN…
The biphenylene network (BPN) is a notable achievement in recent fabrication endeavors for conceiving new 2D materials. The stability of its boron nitride counterpart, BN-BPN, has been confirmed through numerical investigations. In this…
In 2015, a new two dimensional (2D) carbon allotrope, called phagraphene, was theoretically proposed. Based on this structure, we propose here a new boron nitride structure called phaBN. It is composed by three types of rings: pentagons,…
First-principles investigations of the structural, electronic and magnetic properties of Cr-doped AlN/GaN (0001) heterostructures reveal that Cr segregates into the GaN region, that these interfaces retain their important half-metallic…
The discovery of electric field induced bandgap opening in bilayer graphene opens new door for making semiconducting graphene without aggressive size scaling or using expensive substrates. However, bilayer graphene samples have been limited…
Hexagonal boron nitride (hBN) is a layered dielectric material with a wide range of applications in optics and photonics. In this work, we demonstrate a fabrication method for few-layer hBN flakes with areas up to 5000 $\rm \mu m$. We show…
In this express, we demonstrate few-layer orthorhombic arsenene is an ideal semiconductor. Due to the layer stacking, multilayer arsenenes always behave as intrinsic direct bandgap semiconductors with gap values of around 1 eV. In addition,…
Tuning thermal transport in semiconductor nanostructures is of great significance for thermal management in information and power electronics. With excellent transport properties, such as ballistic transport, immunity to point defects and…
Boron K-edge soft x-ray emission and absorption are used to address the fundamental question of whether divalent hexaborides are intrinsic semimetals or defect-doped bandgap insulators. These bulk sensitive measurements, complementary and…
We combine electron energy-loss spectroscopy and first-principles calculations based on density-functional theory (DFT) to identify the lowest indirect exciton state in the in-plane charge response of hexagonal boron nitride (h-BN) single…
Transition metal aluminum nitrides are a technologically important class of multifunctional ceramics, however, the HfAlN system remains largely unexplored. We investigate phase stability, nanostructure design, and mechanical behavior of…
The polarization discontinuity across interfaces in polar nitride-based heterostructures can lead to the formation of two-dimensional electron and hole gases. In the past, the observation of these electron and hole gases has been achieved…