Related papers: Random Field Driven Spatial Complexity at the Mott…
Coupled structural and electronic phase transitions underlie the multifunctional properties of strongly-correlated materials. For example, colossal magnetoresistance1,2 in manganites involves phase transition from paramagnetic insulator to…
We reexamine the problem of delocalization of two-dimensional electrons in the presence of random magnetic field. By introducing spatial correlations among random fluxes, a well-defined metal-insulator transition characterized by a…
Vanadium sesquioxide, V2O3, is a prototypical metal-to-insulator system where, in temperature-dependent studies, the transition always coincides with a corundum-to-monoclinic structural transition. As a function of pressure, V2O3 follows…
Researchers pursuing advanced photoelectric devices have discovered near room-temperature metal-insulator transitions (MIT) in non-volatile VO2. Despite theoretical investigations suggesting that polaron dynamics mediate the MIT, direct…
The proposed switching mechanism is based on an electronically-induced metal-insulator transition occurring in conditions of the excess non-equilibrium carrier density under the applied electric field. First, this mechanism is developed on…
Impedance spectroscopy measurements were performed in high quality Vanadium dioxide (VO2) thin films. This technique allows us investigate the resistive and capacitive contribution to the dielectric response near the metal-insulator…
A common method of adjusting the metal-insulator transition temperature of M$_{1}$ VO$_{2}$ is via disruption of the Peierls pairing by doping, or inputting stress or strain. However, since adding even small amounts of dopants will change…
Many strongly correlated electronic materials, including high-temperature superconductors, colossal magnetoresistance and metal-insulator-transition (MIT) materials, are inhomogeneous on a microscopic scale as a result of domain structure…
Switching voltage of first-order metal-insulator transition (MIT) in VO_2, an inhomogeneous strongly correlated system, is changed by irradiating an infrared light with wavelength, 1.5 micrometer, and applying the electric field…
We report that the thermally-induced Mott transition in vanadium sesquioxide shows critical-slowing-down and enhanced variance ('critical opalescence') of the order parameter fluctuations measured through low-frequency resistance-noise…
The metal-insulator transition (MIT) in vanadium dioxide (VO2) has the potential to lead to a number of disruptive technologies, including ultra-fast data storage, optical switches, and transistors which move beyond the limitations of…
The temperature dependence of the local structure of V_2O_3 in the vicinity of the metal to insulator transition (MIT) has been investigated using hard X-ray absorption spectroscopy. It is shown that the vanadium pair distance along the…
Many Mott systems feature a first-order metal-insulator transition at finite temperatures, with an associated phase coexistence region displaying inhomogeneities and local phase separation. Here one typically finds "bubbles" or domains of…
Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In…
Vanadium dioxide (VO2) has been widely studied for its rich physics and potential applications, undergoing a prominent insulator-metal transition (IMT) near room temperature. The transition mechanism remains highly debated, and little is…
We report the simultaneous measurement of the structural and electronic components of the metal-insulator transition of VO$_2$ using electron and photoelectron spectroscopies and microscopies. We show that these evolve over different…
Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a…
V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a…
The interaction-induced metal-insulator transition should be in the Ising universality class. Experiments on layered organic superconductors suggest that the observed critical endpoint of the first-order Mott transition belongs instead to a…
The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still…