Related papers: Dynamical conductivity of gated AA-stacking multil…
The electrical generation of spin signals is of central interest for spintronics, where graphene stands as a relevant platform as its spin-orbit coupling (SOC) is tuned by proximity effects. Here, we propose an enhancement of spin-charge…
Quantum dots connected to larger systems containing a continuum of states like charge reservoirs allow the theoretical study of many-body effects such as the Coulomb blockade and the Kondo effect. Here, we analyze the nonequilibrium Kondo…
Graphene nanostructures can be engineered with atomic precision to display customized electronic states with application in spintronics or quantum technologies. In order to take advantage of their full potential, their charge and spin state…
We demonstrated theoretically that the renormalization of the electron energy spectrum near the Dirac point of graphene by a strong high-frequency electromagnetic field (dressing field) drastically depends on polarization of the field.…
The recent discovery of methods to isolate graphene, a one-atom-thick layer of crystalline carbon, has raised the possibility of a new class of nano-electronics devices based on the extraordinary electrical transport and unusual physical…
Using the low-energy effective Hamiltonian of the ABC-stacked multilayer graphene, pseudo spin coupling to real orbital angular momentum of electron in multilayer graphene is investigated. We show that electron wave function in N-layer…
Predictive first-principles calculations suggest graphitic-like GaN to be theoretically possible. Thus far, it has not been experimentally reported. We report on GaN monolayer in a buckled geometry obtained in confinement at graphene/SiC…
Structural, energetic and tribological characteristics of double-layer graphene with commensurate and incommensurate krypton spacers of nearly monolayer coverage are studied within the van der Waals-corrected density functional theory. It…
Spin-orbit coupling (SOC) can provide essential tools to manipulate electron spins in two-dimensional materials like graphene, which is of great interest for both fundamental physics and spintronics application. In this paper, we report the…
Growth of graphene on monolayer transition-metal dichalcogenides presents opening on band gap and giant spin-orbit coupling which paves the way to achieve a useful hybrid structure for electronics and spintronics applications. Increase of…
The quantum transport properties of graphene and monolayer $MoS_2$ superconductor heterostructures has been of considerable importance in the recent few years. Layered nature of molybdenum disulfide permits the superconducting correlation…
We demonstrate in this work, that expanded graphite (EG) can lead to a very large enhancement in thermal conductivity of polyetherimide-graphene and epoxy-graphene nanocomposites prepared via solvent casting technique. A k value of 6.56…
On the basis of tight-binding lattice model, the edge states of monolayer and bilayer graphene nanoribbons (GNRs) with different edge terminations are studied. The effects of edge-hopping modulation, spin-orbital coupling (SOC), and bias…
We present a circuit-compatible compact model of the intrinsic capacitances of graphene field-effect transistors (GFETs). Together with a compact drain current model, a large-signal model of GFETs is developed combining both models as a…
We report on the investigation of proximity-induced spin-orbit coupling (SOC) in a heterostructure of bilayer graphene (BLG) and tungsten diselenide (WSe$_2$). A BLG quantum dot (QD) in the few-particle regime acts as a sensitive probe for…
We investigate the effects of Rashba and intrinsic spin-orbit couplings in graphynes. First, we develop a general method to address spin-orbit couplings within the tight-binding theory. Then, we apply this method to $\alpha$, $\beta$, and…
We study the ballistic conductivity of bilayer graphene in the presence of symmetry-breaking terms in effective Hamiltonian for low-energy excitations, such as the trigonal-warping term ($\gamma_3$), the electron-hole symmetry breaking…
Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability.…
We present a theoretical study of the bandstructure and Landau levels in bilayer graphene at low energies in the presence of a transverse magnetic field and Rashba spin-orbit interaction in the regime of negligible trigonal distortion.…
This is a theoretical study of electron transport in gated bilayer graphene - a novel semiconducting material with a tunable band gap. It is shown that the which-layer pseudospin coherence enhances the subgap conductivity and facilitates…