Related papers: Controlling quantum spin Hall state via strain in …
Quantum Anomalous Hall (QAH) state in six quintuple layer Cr$_{0.1}$(Bi$_{0.2}$Sb$_{0.8}$)$_{1.9}$Te$_3$ thin films were studied through scanning tunneling spectroscopy (STS) and electrical transport measurements. While the surface state is…
In search for a new generation of spintronics hardware, material candidates for room temperature quantum spin Hall effect (QSHE) have become a contemporary focus of investigation. Inspired by the original proposal for QSHE in graphene,…
Fermi surface topology plays an important role in determining the electronic properties of metals. In bulk metals, the Fermi energy is not easily tunable at the energy scale needed for reaching conditions for the Lifshitz transition - a…
The quantum Hall system can be used to study many-body physics owing to its multiple internal electronic degrees of freedom and tunability. While quantum phase transitions have been studied intensively, research on the temperature-induced…
We report an intriguing transition from the quantum spin Hall phase to the spin Hall effect upon segregation of thallium adatoms adsorbed onto a graphene surface. Landauer-B\"uttiker and Kubo-Greenwood simulations are used to access both…
The puzzle of recently observed insulating phase of graphene at filling factor $\nu=0$ in high magnetic field quantum Hall (QH) experiments is investigated. We show that the magnetic field driven Peierls-type lattice distortion (due to the…
Epitaxial bismuthene on SiC(0001) hosts symmetry-protected metallic edge states within a large bulk band gap, establishing it as a promising two-dimensional topological insulator for hightemperature quantum spin Hall (QSH) transport. Here…
Quantum spin Hall (QSH) insulators have unique electronic properties, comprising a band gap in their two-dimensional interior and one-dimensional spin-polarized edge states in which current flows ballistically. In scanning tunneling…
We analyze a quantum spin Hall (QSH) device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the…
Using the non-equilibrium Green\noindent 's function method and the Keldysh formalism, we study the effects of spin-orbit interactions and time-reversal symmetry breaking exchange fields on non-equilibrium quantum transport in graphene…
We consider the zero-filled quantum-Hall ferromagnetic state of bilayer graphene subject to a kink-like perpendicular electric field, which generates domain walls in the electronic state and low-energy collective modes confined to move…
We present a detailed description of the nature of the wavefunction and spin distribution of the zero energy modes of zigzag graphene ribbons (ZGRs) in the presence of the intrinsic spin_orbit (I-SO) interaction. These states characterize…
We describe a new phase transition of the bilayer quantum Hall ferromagnet at filling fraction $\nu = 1$. In the presence of static disorder (modeled by a periodic potential), bosonic $S=1/2$ spinons can undergo a superfluid-insulator…
Phosphorene, a monolayer of black phosphorus, is promising for nanoelectronic applications not only because it is a natural p-type semiconductor but also it possesses a layer-number dependent direct bandgap (in the range of 0.3 eV~1.5 eV).…
Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum…
The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability,…
The quantum spin Hall insulator (QSHI) state has been demonstrated in two semiconductor systems - HgTe/CdTe quantum wells (QWs) and InAs/GaSb QW bilayers. Unlike the HgTe/CdTe QWs, the inverted band gap in InAs/GaSb QW bilayers does not…
The quantum-spin-Hall (QSH) phase of 2D topological insulators has attracted increased attention since the onset of 2D materials research. While large bulk gaps with vanishing edge gaps in atomically thin layers have been reported,…
Synthetic quantum Hall bilayer (SQHB), realized by optically driven monolayer graphene in the quantum Hall regime, provides a flexible platform for engineering quantum Hall phases as discussed in [Phys. Rev. Lett. 119, 247403]. The coherent…
When one of the graphene layers of Magic Angle Twisted Bilayer Graphene is nearly aligned with its hexagonal boron nitride substrate (a configuration dubbed TBG/hBN), the active electronic bands are nearly flat, and have a Chern number…