Related papers: E-BLOW: E-Beam Lithography Overlapping aware Stenc…
Electron beam lithography (EBL) is a promising maskless solution for the technology beyond 14nm logic node. To overcome its throughput limitation, recently the traditional EBL system is extended into MCC system. %to further improve the…
In this work multilevel pattering capabilities of Substrate Conformal Imprint Lithography (SCIL) have been explored. A mix & match approach combining the high throughput of nanoimprint lithography with the excellent overlay accuracy of…
In the realm of lithography, Optical Proximity Correction (OPC) is a crucial resolution enhancement technique that optimizes the transmission function of photomasks on a pixel-based to effectively counter Optical Proximity Effects (OPE).…
Maintaining the highest quality and output of photon science in the VUV-, EUV-, soft- and tender-X-ray energy ranges requires high-quality blazed profile gratings. Currently, their availability is critical due to technological challenges…
Multiple patterning lithography (MPL) is regarded as one of the most promising ways of overcoming the resolution limitations of conventional optical lithography due to the delay of next-generation lithography technology. As the feature size…
Stencil computations are a key class of applications, widely used in the scientific computing community, and a class that has particularly benefited from performance improvements on architectures with high memory bandwidth. Unfortunately,…
Conventional lithography methods involving pattern transfer through resist templating face challenges of material compatibility with various process solvents. Other approaches of direct material writing often compromise pattern complexity…
Programmable electron-beam scanning offers new opportunities to improve dose efficiency and suppress scan-induced artifacts in scanning transmission electron microscopy. Here, we systematically benchmark the impact of non-raster…
Stencil algorithms on regular lattices appear in many fields of computational science, and much effort has been put into optimized implementations. Such activities are usually not guided by performance models that provide estimates of…
Pattern transfer by deep anisotropic etch is a well-established technique for fabrication of nanoscale devices and structures. For this technique to be effective, the resist material plays a key role and must have high resolution,…
Moore Law states that transistor density will double every two years, which is sustained until today due to continuous multi-directional innovations, such as extreme ultraviolet lithography, novel patterning techniques etc., leading the…
Triple patterning lithography (TPL) is one of the most promising techniques in the 14nm logic node and beyond. Conventional LELELE type TPL technology suffers from native conflict and overlapping problems. Recently, as an alternative…
Electron-beam direct-write (EBDW) lithography systems must in the future transmit terabits of information per second to be viable for commercial semiconductor manufacturing. Lossless layout image compression algorithms with high decoding…
We construct an efficient class of increasingly high-order (up to 17th-order) essentially non-oscillatory schemes with multi-resolution (ENO-MR) for solving hyperbolic conservation laws. The candidate stencils for constructing ENO-MR…
Image steganography is the art of hiding secret message in grayscale or color images. Easy detection of secret message for any state-of-art image steganography can break the stego system. To prevent the breakdown of the stego system data is…
Scanning Transmission Electron Microscopy (STEM) coupled with Electron Energy Loss Spectroscopy (EELS) presents a powerful platform for detailed material characterization via rich imaging and spectroscopic data. Modern electron microscopes…
Performance indicators characterizing modern steganographic techniques include capacity (i.e. the quantity of data that can be hidden in the cover medium), stego quality (i.e. artifacts visibility), security (i.e. undetectability), and…
As the feature size of semiconductor process further scales to sub-16nm technology node, triple patterning lithography (TPL) has been regarded one of the most promising lithography candidates. M1 and contact layers, which are usually…
Steganography embeds secret messages in seemingly innocuous carriers for covert communication under surveillance. Current Provably Secure Steganography (PSS) schemes based on language models can guarantee computational indistinguishability…
Layout fracturing is a fundamental step in mask data preparation and e-beam lithography (EBL) writing. To increase EBL throughput, recently a new L-shape writing strategy is proposed, which calls for new L-shape fracturing, versus the…