Layout fracturing is a fundamental step in mask data preparation and e-beam lithography (EBL) writing. To increase EBL throughput, recently a new L-shape writing strategy is proposed, which calls for new L-shape fracturing, versus the conventional rectangular fracturing. Meanwhile, during layout fracturing, one must minimize very small/narrow features, also called slivers, due to manufacturability concern. This paper addresses this new research problem of how to perform L-shaped fracturing with sliver minimization. We propose two novel algorithms. The first one, rectangular merging (RM), starts from a set of rectangular fractures and merges them optimally to form L-shape fracturing. The second algorithm, direct L-shape fracturing (DLF), directly and effectively fractures the input layouts into L-shapes with sliver minimization. The experimental results show that our algorithms are very effective.
@article{arxiv.1402.2420,
title = {L-Shape based Layout Fracturing for E-Beam Lithography},
author = {Bei Yu and Jhih-Rong Gao and David Z. Pan},
journal= {arXiv preprint arXiv:1402.2420},
year = {2014}
}