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We lay out an experiment to realize time-reversal invariant topological insulators in alkali atomic gases. We introduce an original method to synthesize a gauge field in the near-field of an atom-chip, which effectively mimics the effects…

Electronic bands featuring nontrivial bulk topological invariant manifest through robust gapless modes at the boundaries, e.g., edges and surfaces. As such this bulk-boundary correspondence is also operative in driven quantum materials. For…

Mesoscale and Nanoscale Physics · Physics 2021-07-26 Tanay Nag , Bitan Roy

Three dimensional topological insulators are bulk insulators with $\mathbf{Z}_2$ topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by…

Mesoscale and Nanoscale Physics · Physics 2017-03-07 Yishuai Xu , Janet Chiu , Lin Miao , Haowei He , Zhanybek Alpichshev , A. Kapitulnik , Rudro R. Biswas , L. Andrew Wray

Topological insulators (TIs) have attracted much attention due to their spin-polarized surface and edge states, whose origin in symmetry gives them intriguing quantum-mechanical properties. Robust control over the chemical potential of TI…

Mesoscale and Nanoscale Physics · Physics 2015-10-28 Andrew L. Yeats , Yu Pan , Anthony Richardella , Peter J. Mintun , Nitin Samarth , David D. Awschalom

Exponentially localized surface states are the most distinctive property of a crystal with non-trivial band topology. Such surface states play a key role in characterizing topological insulators (TIs), both in theory and experiments. TIs…

Strongly Correlated Electrons · Physics 2021-10-29 Shouvik Sur , Pallab Goswami

Using comprehensive exact diagonalization calculations on $\theta \approx 3.7 ^{\circ}$ twisted bilayer MoTe$_2$ ($t$MoTe$_2$), as well as idealized Landau level models also relevant for lower $\theta$, we extract general principles for…

The band structure, intra- and interband scattering processes of the electrons at the surface of a bismuth-bilayer on Bi$_2$Se$_3$ have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy.…

Mesoscale and Nanoscale Physics · Physics 2015-06-23 A. Eich , M. Michiardi , G. Bihlmayer , X. -G. Zhu , J. -L. Mi , Bo B. Iversen , R. Wiesendanger , Ph. Hofmann , A. A. Khajetoorians , J. Wiebe

Two-dimensional Na$_3$Bi is a dual topological insulator protected by time-reversal and mirror symmetry, resulting in a promising platform for devices design. However, in reality, the design of topological devices is hindered by a…

Mesoscale and Nanoscale Physics · Physics 2021-03-01 Bruno Focassio , Gabriel R. Schleder , Armando Pezo , Marcio Costa , Adalberto Fazzio

Topologically protected edge channels show prospects for quantum devices. They have been found experimentally in two-dimensional (2D) quantum spin Hall insulators (QSHIs), weak topological insulators and higher-order topological insulators…

High surface-mobility, which is attributable to topological protection, is a trademark of three-dimensional topological insulators (3DTIs). Exploiting surface-mobility indicates successful application of topological properties for practical…

A topological insulator possesses a bulk energy gap splitting the lowest empty band from the highest occupied electronic band. The electronic states at the surface (or edge in two dimensions), on the other hand, of a topological insulator…

Materials Science · Physics 2020-05-28 Md. Asif Afzal , S. H. Naqib

Topological insulators in three dimensions are characterized by a Z2-valued topological invariant, which consists of a strong index and three weak indices. In the presence of disorder, only the strong index survives. This paper studies the…

Mesoscale and Nanoscale Physics · Physics 2016-11-25 H. -M. Guo

An axion insulator is a three-dimensional (3D) topological insulator (TI), in which the bulk maintains the time-reversal symmetry or inversion symmetry but the surface states are gapped by surface magnetization. The axion insulator state…

A band gap for electronic states in crystals governs various properties of solids, such as transport, optical and magnetic properties. Its estimation and control have been an important issue in solid state physics. The band gap can be…

Mesoscale and Nanoscale Physics · Physics 2017-05-16 Shuichi Murakami , Motoaki Hirayama , Ryo Okugawa , Takashi Miyake

Nontrivial band topology along with magnetism leads to different novel quantum phases. When time-reversal-symmetry is broken in three-dimensional topological insulators (TIs) by applying high enough magnetic field or proximity effect,…

Mesoscale and Nanoscale Physics · Physics 2023-09-11 Nezhat Pournaghavi , Banasree Sadhukhan , Anna Delin

Topological insulators are a broad class of unconventional materials that are insulating in the interior but conduct along the edges. This edge transport is topologically protected and dissipationless. Until recently, all existing…

The existence of gapless Dirac surface band of a three dimensional (3D) topological insulator (TI) is guaranteed by the non-trivial topological character of the bulk band, yet the surface band dispersion is mainly determined by the…

Mesoscale and Nanoscale Physics · Physics 2015-09-24 Cui-Zu Chang , Peizhe Tang , Xiao Feng , Kang Li , Xu-Cun Ma , Wenhui Duan , Ke He , Qi-Kun Xue

In a topological crystalline insulator (TCI) the inversion of the bulk valence and conduction bands is a necessary condition to observe surface metallic states. Solid solutions of Pb$_{1-x}$Sn$_x$Te have been shown to be TCI, where band…

Topological insulators (TIs) are a class of materials characterized by an insulting bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although…

Topological insulators [1-6] is a new quantum phase of matter with exotic properties such as dissipationless transport and protection against Anderson localization [7]. These new states of quantum matter could be one of the missing links…

Materials Science · Physics 2010-07-29 M. Klintenberg
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