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A key component for optical on-chip communication is an efficient light source. However, to enable low energy per bit communication and local integration with Si CMOS, devices need to be further scaled down. In this work, we fabricate…
Metastable silicon phases have attracted extensive attention these years, due to their fundamentally distinct photoelectric properties compared to the conventional diamond cubic (I) counterpart. Certain metastable phases, prepared via…
Highly sensitive photodetectors with single photon level detection is one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing.…
This letter describes the design and operation of a polymer-based third order distributed feed-back (DFB) microfluidic dye laser. The device relies on light-confinement in a nano-structured polymer film where an array of nanofluidic…
Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically…
A silicon light source at communication wavelength is the bottleneck for developing monolithically integrated silicon photonics. Doping silicon with erbium ions was believed to be one of the most promising approaches but suffers from the…
Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong…
We report the first demonstration of a 1555 nm stepped-height ridge waveguide polarization mode converter monolithically integrated with a side wall grating distributed-feedback (DFB) laser using the identical epitaxial layer scheme. The…
Diamond silicon (Si) is the leading material in current solar cell market. However, diamond Si is an indirect band gap semiconductor with a large energy difference (2.4 eV) between the direct gap and the indirect gap, which makes it an…
Gallium phosphide (GaP) has recently received considerable attention as a suitable material for building photonic integrated circuits due to its remarkable optical and piezoelectric properties. Usually, GaP is grown epitaxially on III-V…
We have developed an integrated dual-band photonic filter (PF) utilizing equivalent chirped four-phase-shifted sidewall-sampled Bragg gratings (4PS-SBG) on a silicon-on-insulator (SOI) platform. Using the reconstruction equivalent-chirp…
Traditional Distributed Feedback (DFB) or Distributed Bragg Reflector (DBR) lasers typically utilize buried gratings as frequency-selective optical feedback mechanisms. However, the fabrication of such gratings often necessitates regrowth…
Optical frequency combs represent a revolutionary technology for high precision spectroscopy due to their narrow linewidths and precise frequency spacing. Generation of such combs in the mid-infrared (IR) spectral region (2-20 um) is of…
The past decade has witnessed major advances in the development of microresonator-based frequency combs (microcombs) that are broadband optical frequency combs with repetition rates in the millimeter-wave to microwave domain. Integrated…
Applications such as augmented and virtual reality (AR/VR), optical atomic clocks, and quantum computing require photonic integration of (near-)visible laser sources to enable commercialization at scale. The heterogeneous integration of…
Silicene is one of the most promising 2D materials for the realization of next-generation electronic devices, owing to its high carrier mobility and bandgap tunability through the imposition of an external electric field. To exploit this…
High quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize owing to the large lattice mismatch with other widespread semiconductor substrates. A way around this problem is to grow free-standing 2D InSb…
Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power…
The "textbook" phonon mean free path (MFP) of heat carrying phonons in silicon at room temperature is ~40 nm. However, a large contribution to the thermal conductivity comes from low-frequency phonons with much longer MFPs. We present a…
Silicon is an excellent material for microelectronics and integrated photonics with untapped potential for mid-IR optics. Despite broad recognition of the importance of the third dimension, current lithography methods do not allow…