Related papers: Valley blockade and multielectron spin-valley Kond…
Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of…
A scenario for the formation of symmetry protected non-Fermi-liquid (NFL) Kondo effect (KE) with spin variable enumerating Kondo channels is suggested and worked out. In doubly occupied symmetric triple quantum dot within parallel geometry,…
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such…
Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we…
Electron tunneling through a system formed by two coupled quantum dots in a parallel geometry is considered within a generalized Anderson model. The dots are assumed to have nearly equal radii but different (and tunable) gate voltages. In…
We study the SU(4) Kondo effect in carbon nanotube quantum dots, where doubly degenerate orbitals form 4-electron ``shells''. The SU(4) Kondo behavior is investigated for one, two and three electrons in the topmost shell. While the Kondo…
Kondo breakdown is one of the most intriguing problems in strongly correlated electron systems, as it is rooted in many anomalous electron behaviors found in heavy-fermion materials. In Kondo lattice systems, Kondo breakdown can arise from…
Using a state-of-the art combination of density functional theory and impurity solver techniques we present a complete and parameter-free picture of the Kondo effect in the high-spin ($S=3/2$) coordination complex known as Manganese…
Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the electron valleys in these systems for spin/valley filter and…
We discuss a device --- a purely capacitively coupled interacting spinless triple quantum dot system --- for the observation of the SU(3) Kondo effect. Unlike more familiar SU(2) and SU(4) Kondo effects in quantum dot devices which lead to…
Valley-based electronics, known as valleytronics, is one of the keys to break through to a new stage of electronics. The valley degree of freedom is ubiquitous in the honeycomb lattice system. The honeycomb lattice structure of silicon…
Electronic states in silicon quantum dots are examined theoretically, taking into account a multivalley structure of the conduction band. We find that (i) exchange interaction hardly works between electrons in different valleys. In…
Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent…
We investigate the scattering off dilute magnetic impurities placed on the surface of three-dimensional topological insulators. In the low-temperature limit, the impurity moments are Kondo-screened by the surface-state electrons, despite…
We consider electron transport along a single-mode channel which is in contact, via tunnel junctions in its walls, with two quantum dots. Electron tunneling to and from the dots contributes to the electron backscattering, and thus modifies…
Using magnetocapacitance data, we directly determine the chemical potential jump in a strongly correlated 2D electron system in silicon when the filling factor traverses the valley gap at \nu=1 and \nu=3. The data yield a valley gap that is…
Quantum entanglement between an impurity spin and electrons nearby is a key property of the single-channel Kondo effects. We show that the entanglement can be detected by measuring electron conductance through a double quantum dot in an…
Recently, Coulomb blockade physics was observed at room temperature in a carbon nanotube single-electron transistor (H. W. Ch. Postma, et. al., Science 293, 76 (2001)). In this work, we suggest that these devices may be promising for…
We review our recent studies on the Kondo effect in the tunneling phenomena through quantum dot systems. Numerical methods to calculate reliable tunneling conductance are developed. In the first place, a case in which electrons of odd…
We report a combined experimental and theoretical study of the Kondo effect in a series of binuclear metal-organic complexes of the form [(Me(hfacac)_2)_2(bpym)]^0, with Me = Nickel (II), Manganese(II), Zinc (II); hfacac =…