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Using density functional theory and non-equilibrium Greens function technique, we performed theoretical investigations on the structural and transport properties of zigzag silicene nanoribbons with Stone-Wales defect. The calculated…

Materials Science · Physics 2016-01-07 Dace Zha , Changpeng Chen , Manman Wang

Graphene has attracted increasing interests due to its remarkable properties, however, the zero band gap of monolayer graphene might limit its further electronic and optoelectronic applications. Herein, we have successfully synthesized…

Using a semiclassical Boltzmann transport equation (BTE) approach, we derive analytical expressions for electric and thermoelectric transport coefficients of graphene in the presence and absence of a magnetic field. Scattering due to…

Materials Science · Physics 2017-04-26 Arpan Kundu , Majed Alrefae , Timothy S. Fisher

A tight binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap $\Delta$ between the conduction and valence bands. In particular, a self…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 Edward McCann

We determine the size effect on the lattice thermal conductivity of nanoscale wire and multilayer structures formed in and by some typical semiconductor materials, using the Boltzmann transport equation and focusing on the Knudsen flow…

Materials Science · Physics 2009-11-11 Eleni Ziambaras , Per Hyldgaard

It has been predicted that application of a strong electric field perpendicular to the plane of bilayer graphene can induce a significant band gap. We have measured the optical conductivity of bilayer graphene with an efficient electrolyte…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 Kin Fai Mak , Chun Hung Lui , Jie Shan , Tony F. Heinz

Pressure induced structural and electronic transitions of Se helical chains confined inside nano-channels are studied. Raman scattering and optical absorption experiments show strong evidence of band gap reduction under high pressure. Ab…

Materials Science · Physics 2009-10-06 Wei Ren , Jian-Ting Ye , Wu Shi , Zi-Kang Tang , C. T. Chan , Ping Sheng

Nanostructuring on length scales corresponding to phonon mean free paths provides control over heat flow in semiconductors and makes it possible to engineer their thermal properties. However, the influence of boundaries limits the validity…

Bilayer graphene has drawn significant attention due to the opening of a band gap in its low energy electronic spectrum, which offers a promising route to electronic applications. The gap can be either tunable through an external electric…

Mesoscale and Nanoscale Physics · Physics 2015-05-27 Gregory M. Rutter , Suyong Jung , Nikolai N. Klimov , David B. Newell , Nikolai B. Zhitenev , Joseph A. Stroscio

We report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional…

Other Condensed Matter · Physics 2008-02-18 Xihua Wang , Yu Chen , Mi K. Hong , Shyamsunder Erramilli , Pritiraj Mohanty

The thermal expansion effect of silicon nanowires (SiNW) in [100], [110] and [111] directions with different sizes is theoretically investigated. At low temperatures, all SiNW studied exhibit thermal contraction effect due to the lowest…

Materials Science · Physics 2015-05-14 Jin-Wu Jiang , Jian-Sheng Wang , Baowen Li

Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on…

Graphene demonstrated potential for practical applications owing to its excellent electronic and thermal properties. Typical graphene field-effect transistors and interconnects built on conventional SiO2/Si substrates reveal the breakdown…

Materials Science · Physics 2015-06-04 Jie Yu , Guanxiong Liu , Anirudha V. Sumant , Vivek Goyal , Alexander A. Balandin

Quantized conductance is reported in high-crystalline tin oxide (SnO2) nanobelt back-gate field-effect transistors, at low temperatures. The quantized conductance was observed as current oscillations in the drain current vs. gate voltage…

Mesoscale and Nanoscale Physics · Physics 2013-03-08 E. R. Viana , J. C. Gonzalez , G. M. Ribeiro , A. G. de Oliveira

In view of the appreciable semiconducting gap of 0.26 eV observed in recent experiments, epitaxial graphene on a SiC substrate seems a promising channel material for FETs. Indeed, it is two-dimensional - and therefore does not require…

Mesoscale and Nanoscale Physics · Physics 2015-05-14 Martina Cheli , Paolo Michetti , Giuseppe Iannaccone

Graphene is a quantum spin Hall insulator with a 45 $\mu$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for…

Lead Selenide (PbSe) is an attractive `IV-VI' semiconductor material to design optical sensors, lasers and thermoelectric devices. Improved fabrication of PbSe nanowires (NWs) enables the utilization of low dimensional quantum effects. The…

Mesoscale and Nanoscale Physics · Physics 2015-05-27 Abhijeet Paul , Gerhard Klimeck

We employ tip-enhanced infrared near-field microscopy to study the plasmonic properties of epitaxial quasi-free-standing monolayer graphene on silicon carbide. The near-field images reveal propagating graphene plasmons, as well as a strong…

Electronic, optical and transport properties of the graphene/ZnO heterostructure have been explored using first-principles density functional theory. The results show that Zn12O12 can open a band gap of 14.5 meV in graphene, increase its…

Materials Science · Physics 2017-06-21 Md Monirojjaman Monshi , Sadegh Mehdi Aghaei , Irene Calizo

Impurities are unavoidable during the preparation of graphene samples and play an important role in graphene's electronic properties when they are adsorbed on graphene surface. In this work, we study the electronic structures and transport…

Mesoscale and Nanoscale Physics · Physics 2020-03-31 Lan Chen , Fangping Ouyang , Songshan Ma , Tie-Feng Fang , Ai-Min Guo , Qing-Feng Sun