Related papers: Bad-metal behavior reveals Mott quantum criticalit…
Recent studies of electrical transport, both theoretical and experimental, near the bandwidth-tuned Mott metal-insulator transition have uncovered apparent quantum critical scaling of the electrical resistivity at elevated temperatures,…
For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…
We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…
The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping…
Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal-insulator transition. We investigate the Mott transition in a Hubbard model by…
The experimentally established phase diagram of the half-filled Hubbard model features the existence of three distinct finite-temperature regimes, separated by extended crossover regions. A number of crossover lines can be defined to span…
Mott quantum criticality is a central theme in correlated electron physics, observed in systems featuring both continuous zero-temperature transitions and those with finite-temperature critical endpoints. Within dynamical mean-field theory…
The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the…
Strongly correlated materials often undergo a Mott metal-insulator transition, which is tipically first-order, as a function of control parameters like pressure. Upon doping, rich phase diagrams with competing instabilities are found. Yet,…
Correlated electrons in a binary alloy $A_{x}B_{1-x}$ are investigated within the Hubbard model and dynamical mean--field theory (DMFT). The random energies $\epsilon_{i}$ have a bimodal probability distribution and an energy separation…
The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping…
The Mott transition in a multi-orbital Hubbard model involving subbands of different widths is studied within the dynamical mean field theory. Using the iterated perturbation theory for the quantum impurity problem it is shown that at low…
We study analytically the Mott transition of the N-orbital Hubbard model using dynamical mean-field theory and a low-energy projection onto an effective Kondo model. It is demonstrated that the critical interaction at which the insulator…
Strongly correlated metals often display anomalous transport, including $T$-linear resistivity above the Mott-Ioffe-Regel limit. We introduce a tractable microscopic model for such bad metals, by supplementing the well-known Hubbard model…
We investigate the onset of a not-decaying asymptotic behavior of temporal magnetic correlations in the Hubbard model in infinite dimensions. This long-term memory feature of dynamical spin correlations can be precisely quantified by…
To explain the main features of the metal-insulator transition (MIT) in 2D we suggest a simple model taking into account strongly localized states in the band tail of 2D conductivity band with a specific emphasize of a role of…
Bad metals display transport behavior that differs from what is commonly seen in ordinary metals. One of the most significant differences is a resistivity that is linear in temperature and rises to well above the Ioffe-Regel limit (where…
Metallic states near the Mott insulator show a variety of quantum phases including various magnetic, charge ordered states and high-temperature superconductivity in various transition metal oxides and organic solids. The emergence of a…
We studied several aspects of the Mott metal-insulator transition in the disordered case. The model on which we based our analysis is the disordered Hubbard model, which is the simplest model capable of capturing the Mott metal-insulator…
We perform a systematic study of incoherent transport in the high temperature crossover region of the half-filled one-band Hubbard model. We demonstrate that the family of resistivity curves displays characteristic quantum critical scaling…