Related papers: Fractional Quantum Hall Effect at Landau Level Fil…
We study strongly correlated ground states of dipolar fermions in a honeycomb optical lattice with spatial variations in hopping amplitudes. Similar to a strained graphene, such nonuniform hopping amplitudes produce valley-dependent…
We report on a study of virial expansions for interacting electrons in the lowest Landau level of a two-dimensional electron gas. For hard-core-model interactions, we derive analytic results valid at low temperatures and filling factors…
Gated GaAs/AlGaAs heterostructures were used to determine the low-temperature behavior of the two-dimensional electron gas near filling factor nu=1/2 in the disorder-magnetic-field plane. We identify a line on which sigma_{xy} is…
We derive effective Hamiltonians for the fractional quantum Hall effect in n=0 and n=1 Landau levels that account perturbatively for Landau level mixing by electron-electron interactions. To second order in the ratio of electron-electron…
We constructed a Hall resistance formula for the fractional quantum Hall effect by analyzing the experimental data reported in [J. P. Eisenstein and H. L. Stormer, {Science} {\bf 248}, 1510 (1990)]. The formula is given as a function of…
The fractional quantum Hall (FQH) effect arises from strong electron correlations in a quantising magnetic field, and features exotic emergent phenomena such as electron fractionalisation. Using the diagrammatic Monte Carlo approach with…
Transport experiments in high mobility (110) GaAs heterostructures have been performed at very low temperatures 8 mK. At higher Landau-Levels we observe a transport anisotropy that bears some similarity with what is already seen at…
Since the discovery of the Fractional Quantum Hall Effect in 1982 there has been considerable theoretical discussion on the possibility of fractional quantization of conductance in the absence of Landau levels formed by a quantizing…
Quantum gases are used to simulate the physics of the lowest Landau level (LLL) with neutral atoms, which in the simplest setup is achieved by rotating the gas at the confining harmonic trap frequency, a requirement that is difficult to…
In this paper we propose a model of the fractional quantum Hall effect within conventional one-dimensional bosonization. It is shown that in this formalism the resulting bosonized fermion operator corresponding to momenta of Landau gauge…
We compare the energies of different electron solids, such as bubble crystals with triangular and square symmetry and stripe phases, to those of correlated quantum liquids in partially filled intermediate Landau levels. Multiple transitions…
The fractional quantum Hall effect is a well-known demonstration of strongly correlated topological phases in two dimensions. However, the extension of this phenomenon into a three-dimensional context has yet to be achieved. Recently, the…
We study the fractional quantum Hall effect at filling fractions 7/3 and 5/2 in the presence of the spin-orbit interaction, using the exact diagonalization method and the density matrix renormalization group (DMRG) method in a spherical…
We observe geometric resonance features of composite fermions on the flanks of the even denominator {\nu} = 1/2 fractional quantum Hall state in high-mobility two-dimensional electron and hole systems confined to wide GaAs quantum wells and…
The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant…
We have studied the $\nu=5/2$ fractional quantum Hall state in a density-tunable sample at extremely low electron densities. For the densities accessed in our experiment, the Landau level mixing parameter $\kappa$ spans the…
We have investigated the low temperature (T) transport properties of fractional quantum Hall (FQH) states in a high-mobility two-dimensional hole gas. According to the composite fermion (CF) model, FQH states stemming from a half-filled…
It is shown that the observed Quantum Hall Effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional…
We propose a fermion Chern-Simons field theory describing two- dimensional electrons in the lowest Landau level. This theory is constructed with a complete set of states, and the lowest Landau level constraint is enforced through a…
We report the observation of TEMPERATURE-INDUCED transitions between insulator, metal, and quantum-Hall behaviors for transport coefficients in the very dilute high mobility two-dimensional electron system in silicon. We consider the…