Related papers: Charge and spin transport in a metal-semiconductor…
Recently demonstrated metal-semiconductor heterojunctions with few-atom thickness show their promise as 2D Schottky contacts for future integrated circuits and nanoelectronics. The theory for 3D Schottky contacts, however, fails on these…
Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field and local proximitized magnetic exchange. In this work, we present lattice matched hybrid…
A ferromagnetic insulator (FI) attached to a conventional superconductor (S) changes drastically the properties of the latter. Specifically, the exchange field at the FI/S interface leads to a splitting of the superconducting density of…
It was recently predicted [Phys. Rev. B 75, 193301 (2007)] that spin blockade may develop at nonmagnetic semiconductor/perfect ferromagnet junctions when the electron flow is directed from the semiconductor into the ferromagnet. Here we…
Spin injection efficiency based on conventional ferromagnet (or half-metallic ferromagnet) /semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors…
We consider spin polarized transport in a ferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2) junction. We find that the spin current is strongly dependent on the spin configurations, the doping and space charge…
We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low…
We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $\Delta V$ at the interface as high as 1.2mV for a current…
The precise control of spins in semiconductor spintronic devices requires electrical means for generating spin packets with a well-defined initial phase. We demonstrate a pulsed electrical scheme that triggers the spin ensemble phase in a…
We investigate the charge and spin transport in half-metallic ferromagnet ($F$) and superconductor ($S$) nanojunctions. We utilize a self-consistent microscopic method that can accommodate the broad range of energy scales present, and…
Efforts to achieve efficient injection of spin-polarized electrons into a semiconductor, a key prerequisite for developing electronics that exploit the electron's spin degree of freedom, have so far met with limited success. Here we report…
We predict it is possible to achieve high-efficiency room-temperature spin injection from a mag- netic metal into InAs-based semiconductors using an engineered Schottky barrier based on an InAs/AlSb superlattice. The Schottky barrier with…
We investigate transport properties of junctions between two spin-split superconductors linked by a spin-polarized tunneling barrier. The spin-splitting fields in the superconductors (S) are induced by adjacent ferromagnetic insulating (FI)…
Ultra-thin FeAs is of interest both as the active component in the newly identified pnictide superconductors, and in spintronic applications at the interface between ferromagnetic Fe and semiconducting GaAs. Here we use first-principles…
We develop a Monte Carlo model to study injection of spin-polarized electrons through a Schottky barrier from a ferromagnetic metal contact into a non-magnetic low-dimensional semiconductor structure. Both mechanisms of thermionic emission…
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate…
A quantum theory of the spin-dependent scattering of semiconductor electrons by a Schottky barrier at an interface with a ferromagnet is presented. The reflection of unpolarized non-equilibrium carriers produces spontaneous…
We simulate the electron transport across the Au(111)-pentacene interface using non-equilibrium Green's functions and density-functional theory (NEGF-DFT), and calculate the bias-dependent electron transmission. We find that the electrical…
We present {\it ab initio} calculations of the spin-dependent electronic transport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situation of a spin-injection experiment. We follow a ballistic Landauer-B\"uttiker approach for…
We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in…