Related papers: Gate-tunable quantum oscillations in ambipolar Cd3…
The quantized version of anomalous Hall effect realized in magnetic topological insulators (MTIs) has great potential for the development of topological quantum physics and low-power electronic/spintronic applications. To enable…
Two-dimensional materials (2DM) and their derived heterostructures have electrical and optical properties that are widely tunable via several approaches, most notably electrostatic gating and interfacial engineering such as twisting. While…
We study the temperature dependence ($77$ K - $475$ K) of the longitudinal resistivity and Hall coefficient of thin films (thickness $20$ nm) of three dimensional topological Dirac semimetal Na$_3$Bi grown via molecular beam epitaxy (MBE).…
Pulsed lasers operating in the 2-5 {\mu}m band are important for a wide range of applications in sensing, spectroscopy, imaging and communications. Despite recent advances with mid-infrared gain media, the lack of a capable pulse generation…
The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO$_3$ films with low-temperature mobility exceeding 42,000…
Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices,…
Three dimensional (3D) Dirac semimetals which can be seen as 3D analogues of graphene have attracted enormous interests in research recently. In order to apply these ultrahigh-mobility materials in future electronic/optoelectronic devices,…
Electronic properties of materials are commonly described by quasiparticles that behave as non-relativistic electrons with a finite mass and obey the Schroedinger equation. Here we report a condensed matter system where electron transport…
A 2D electron gas system in an oxide heterostructure serves as an important playground for novel phenomena. Here, we show that, by using fractional delta-doping to control the interface's composition in LaxSr1-xTiO3/SrTiO3 artificial oxide…
Two-dimensional polyaniline with a C3N stoichiometry, is a newly fabricated material that has expected to possess fascinating electronic, thermal, mechanical and chemical properties . The possibility of further tuning the C3N properties…
Cd3As2 is a newly booming Dirac semimetal with linear dispersion along all three momentum directions and can be viewed as 3D analog of graphene. As breaking of either time reversal symmetry or spatial inversion symmetry, the Dirac semimetal…
Superconductivity of the second kind was observed in many 3D Weyl and Dirac semi-metals. However in PdT e2, superconductivity is clearly of the first kind. This is very rare in Dirac semi - metals, but is expected in clean conventional…
We report the charge doping of KCr$_3$As$_3$ via H intercalation. We show that the previously reported ethanol bath deintercalation of K$_2$Cr$_3$As$_3$ to KCr$_3$As$_3$ has a secondary effect whereby H from the bath enters the…
We report experimental evidence of topological Dirac fermion charge carriers in pure and robust $\alpha$-Sn films grown on InSb substrates. This evidence was acquired using standard macroscopic four-point contact resistance measurements,…
Charge-trap memory with high-\k dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials like graphene and MoS2 have been receiving much attention…
Superconductivity (SC) in the Ba-122 family of iron-based compounds can be controlled by aliovalent or isovalent substitutions, applied external pressure, and strain, the combined effects of which are sometimes studied within the same…
We investigate the quantum transport properties of multichannel nanoribbons made of materials described by the Dirac equation, under an in-plane magnetic field. In the low energy regime, positive and negative finger-gate potentials allow…
The band gap of two-dimensional (2D) semiconductors can be efficiently tuned by gate electric field, which is so called the Stark effect. We report that doping, which is essential in realistic devices, will substantially change the Stark…
Next-generation spintronic devices will benefit from low-dimensionality, ferromagnetism, and half-metallicity, possibly controlled by electric fields. We find these technologically-appealing features to be combined with an exotic…
Exploring two-dimensional (2D) materials with magnetic ordering is a focus of current research. It remains a challenge to achieve tunable magnetism in a material of one-atom-thickness without introducing extrinsic magnetic atoms or defects.…