Related papers: Magnetoresistance from broken spin helicity
Magnetic ordering in two-dimensional (2D) materials has recently emerged as a promising platform for data storage, computing, and sensing. To advance these developments, it is vital to gain a detailed understanding of how the magnetic order…
Theory of weak antilocalization is developed for high-mobility two-dimensional systems. Spin-orbit interaction of Rashba and Dresselhaus types is taken into account. Anomalous magnetoresistance is calculated in the whole range of…
We use numerically unbiased methods to show that the one-dimensional Hubbard model with periodically distributed on-site interactions already contains the minimal ingredients to display the phenomenon of magnetoresistance; i.e., by applying…
Bulk metallic samples were synthesized from different binary powder mixtures consisting of elemental Cu, Co, and Fe using severe plastic deformation. Small particles of the ferromagnetic phase originate in the conductive Cu phase, either by…
We study the dependence of perpendicular-current magnetoresistance in magnetic multilayers on the angle between the magnetizations of the layers. This dependence varies with the thickness of one of the layers, and is different for…
Explicit expressions for magnetoresistance $R$ of planar and layered strongly inhomogeneous two-phase systems are obtained, using exact dual transformation, connecting effective conductivities of in-plane isotropic two-phase systems with…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…
Two-component systems with equal concentrations of electrons and holes exhibit non-saturating, linear magnetoresistance in classically strong magnetic fields. The effect is predicted to occur in finite-size samples at charge neutrality in…
The surface of a topological insulator hosts a very special form of a quasi-two dimensional metallic system when it is embedded in a topologically trivial medium like the vacuum. The electronic properties of this unusual 2D metal are…
We investigate theoretically the influence of the spin-orbit interaction of Rashba type on the magnetoresistance of a semiconducting ferromagnetic nanostructure with a laterally constrained domain wall. The domain wall is assumed sharp (on…
A nonlinear magnetoresistance - called unidirectional spin-Hall magnetoresistance - is recently experimentally discovered in metallic bilayers consisting of a heavy metal and a ferromagnetic metal. To study the fundamental mechanism of the…
A recent theory of magnetoresistance in positionally disordered organic semiconductors is extended to include exchange and dipolar couplings between polarons. Analytic results are discovered when the hyperfine, exchange, and dipolar…
Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials…
We theoretically investigate tunneling magnetoresistance (TMR) devices, which are probing the spin-momentum coupled nature of surface states of the three-dimensional topological insulator Bi$_{2}$Se$_{3}$. Theoretical calculations are…
The spin-orbit interaction in heavy metal/ferromagnet/oxide structures has been extensively investigated because it can be employed in manipulation of the magnetization direction by in-plane current. This implies the existence of an inverse…
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the…
Topological materials with extremely large magnetoresistance exhibit a prognostic feature of resistivity turn-on behaviour. This occurs when the temperature dependence of resistivity changes from metallic to semiconducting characteristics…
Some single-crystalline materials present an electrical resistivity which decreases between room temperature and low temperatures at zero magnetic field as in a good metal and switches to a nearly semiconductinglike behavior at low…
We report current-direction dependent or unidirectional magnetoresistance (UMR) in magnetic/nonmagnetic topological insulator (TI) heterostructures, Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{2-x}$Te$_3$/(Bi$_{1-y}$Sb$_y$)$_2$Te$_3$, that is several orders…
Because of spin-orbit interaction, an electrical current is accompanied by a spin current resulting in spin accumulation near the sample edges. Due again to spin-orbit interaction this causes a small decrease of the sample resistance. An…