Related papers: Temperature driven metal-insulator transition in t…
Combining experimental data, numerical transport calculations, and theoretical analysis, we study the temperature-dependent resistivity of high-mobility 2D Si MOSFETs to search for signatures of weak localization induced quantum corrections…
Magnetic and magnetotransport properties of oriented polycrystalline Pr0.58Ca0.42MnO3 thin films prepared in flowing oxygen and air ambient has been investigated. The magnetic ground state of both the films is a frozen cluster glass. In the…
Insulator to metal (IMT) transition (T$_t$ $\sim$ 341 K) in the VO2 accompanies transition from an infrared (IR) transparent to IR opaque phase. Tailoring of the IMT and associated IR switching behavior can offer potential thermochromic…
We investigate the mechanisms involved in the thermomigration of interstitial hydrogen in metals. Using irreversible thermodynamics, we develop a comprehensive mechanistic model to capture the controlling effects. Crucially, through…
Metal-to-insulator transitions (MITs), particularly near room temperature, have been extensively studied in nonmagnetic and conventional ferromagnetic and antiferromagnetic systems, yet the co-emergence of MIT and altermagnetism (AM)…
We study the thermoelectric transport properties in the three-dimensional Anderson model of localization near the metal-insulator transition [MIT]. In particular, we investigate the dependence of the thermoelectric power S, the thermal…
The thermal properties of solids under nanoscale confinement are currently not understood at the atomic level. Recent numerical studies have highlighted the presence of a minimum in the thermal conductivity as a function of thickness for…
We propose that the observed low density ``insulating'' phase of a 2D semiconductor system, with the carrier density being just below ($n < n_c$) the so-called critical density where the derivative of resistivity changes sign at low…
We report direct experimental evidence that the insulating phase of a disordered, yet strongly interacting two-dimensional electron system (2DES) becomes unstable at low temperatures. As the temperature decreases, a transition from…
In an ultrathin topological insulator (TI) film, a hybridization gap opens in the TI surface states, and the system is expected to become either a trivial insulator or a quantum spin Hall insulator when the chemical potential is within the…
We have analyzed spectral weight changes in the conduction and the valence band across insulator to metal transition (IMT) in the VO2 thin film using X-ray absorption spectroscopy (XAS) and resonant photoemission spectroscopy (PES). Through…
Scalable architectures characterized by quantum bits (qubits) with low error rates are essential to the development of a practical quantum computer. In the superconducting quantum computing implementation, understanding and minimizing…
We analyze the temperature dependence of conductivity in thick granular ferromagnetic compounds NiSiO2 and in thin weakly coupled films of Fe, Ni and Py in vicinity of metal-insulator transition. Development of resistivity minimum followed…
The temperature dependence of conductivity $\sigma (T)$ of a two-dimensional electron system in silicon has been studied in parallel magnetic fields B. At B=0, the system displays a metal-insulator transition at a critical electron density…
The established scaling laws of the conductivity with temperature and doping are strong indications for the quantum nature of the metal-insulator transition in YH$_x$. Here we report the first results on the frequency scaling of the…
Melting is typically viewed as a bulk first-order phase transition that proceeds once nucleation barriers are overcome. Here we demonstrate an interfacially arrested melting regime in molecularly thin crystalline films, where large liquid…
Phase transitions are key in determining and controlling the quantum properties of correlated materials. Here, by using the powerful combination of precise material synthesis and angle resolved photoelectron spectroscopy, we show evidence…
We show that in presence of a deformable lattice potential, the nature of the disorder-driven metal-insulator transition (MIT) is fundamentally changed with respect to the non-interacting (Anderson) scenario. For strong disorder, even a…
For a detailed study on the semiconductor to metal transition (SMT) in ZnO thin films doped with Al in the concentration range from 0.02 to 2%, we grew these films on (0001) sapphire substrates using sequential pulsed laser deposition. It…
Terahertz time-domain conductivity measurements in 2 to 100 nm thick iron films resolve the femtosecond time delay between applied electric fields and resulting currents. This response time decreases for thinner metal films. The macroscopic…