Related papers: Temperature driven metal-insulator transition in t…
We propose a mechanism to substantially rectify radiative heat flow by matching thin films of metal-to-insulator transition materials and polar dielectrics in the electromagnetic near field. By leveraging the distinct scaling behaviors of…
Tuning electronic properties through strain engineering of metal oxides is an important step toward understanding electrochemical and catalytic reactions in energy storage and conversion devices. Traditionally, strain engineering studies…
The optical properties of a V4O7 single crystal have been investigated from the high temperature metallic phase down to the low temperature antiferromagnetic insulating one. The temperature dependent behavior of the optical conductivity…
We present low-temperature transport measurements of a gate-tunable thin film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an…
Tungsten oxide and its associated bronzes (compounds of tungsten oxide and an alkali metal) are well known for their interesting optical and electrical characteristics. We have modified the transport properties of thin WO$_3$ films by…
We show how intrinsic material properties modify light transmission through subwavelength hole arrays on thin metallic films in the THz regime. We compare the temperature-dependent transmittance of Au films and MgB$_{2}$ films. The…
We theoretically describe the charge ordering (CO) metal-insulator transition based on a quasi-one-dimensional extended Hubbard model, and investigate the finite temperature ($T$) properties across the transition temperature, $T_{\rm CO}$.…
We have measured the low-field magnetoresistances (MRs) of a series of Sn-doped indium oxide thick films in the temperature $T$ range 4--35 K. The electron dephasing rate $1/\tau_{\varphi}$ as a function of $T$ for each film was extracted…
Impedance spectroscopy measurements were performed in high quality Vanadium dioxide (VO2) thin films. This technique allows us investigate the resistive and capacitive contribution to the dielectric response near the metal-insulator…
We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, $n_{cr}\sim 10^{11}$ cm$^{-2}$),…
The dynamics of itinerant electrons in topological insulator (TI) thin films is investigated using a multi-band decomposition approach. We show that the electron trajectory in the 2D film is anisotropic and confined within a characteristic…
Symmetry-lowering structural phase transitions result in multiple degenerate structures whose coexistence is determined by macroscopic strain compatibility. In quantum materials, these structural transformations often couple to electronic…
DC electrical degradation as a form of dielectric and resistance breakdown is a common phenomenon in thin-film devices including resistance-switching memory. To obtain design data and to probe the degradation mechanism, highly accelerated…
Upon reduction of the film thickness we observe a metal-insulator transition in epitaxially stabilized, spin-orbit coupled SrIrO$_3$ ultrathin films. By comparison of the experimental electronic dispersions with density functional theory at…
This paper is intended to demonstrate that there is no need to revise the existing theory of the transport properties of disordered conductors in the so-called weak localization regime. In particular, we demonstrate explicitly that recent…
We investigate transport in a granular metallic system at large tunneling conductance between the grains, $g_T\gg 1$. We show that at low temperatures, $T\leq g_T\delta $, where $\delta$ is the single mean energy level spacing in a grain,…
We study the combined effects of nonlocal elasticity and confinement induced ordering on the dynamics of thermomolecular pressure gradient driven premelted films bound by an elastic membrane. The confinement induced ordering is modeled…
Measurements of resistance vs. temperature have been carried out on a sequence of quench-condensed ultrathin films of amorphous bismuth (a-Bi). The resistance below about 0.1K was found to be temperature independent in a range of films with…
Electron conduction through bare metal oxide nanocrystal (NC) films is hindered by surface depletion regions resulting from the presence of surface states. We control the radial dopant distribution in tin-doped indium oxide (ITO) NCs as a…
The spectacular metal-to-insulator transition of V2O3 can be progressively suppressed in thin film samples. Evidence for phase separation was observed using microbridges as a mesoscopic probe of transport properties where the same film…