Related papers: Resistance switching devices based on amorphous in…
Without a periodic reference framework, local structures in noncrystalline solids are difficult to specify, but they still exert an enormous influence on materials properties. For example, thermomechanical responses of organic and inorganic…
Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor…
With the staggering increase of edge compute applications like Internet-of-Things (IoT) and artificial intelligence (AI), the demand for fast, energy-efficient on-chip memory is growing. While the fast and mature static random-access memory…
This research explores the characteristics of two CMOS-compatible RRAM cells utilizing silicon nitride as the switching material. By employing SET/RESET pulse sequences, the study successfully attains four distinct and stable resistance…
I review the advancements of atomic scale nanoelectronics towards quantum neuromorphics. First, I summarize the key properties of elementary combinations of few neurons, namely long-- and short--term plasticity, spike-timing dependent…
Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of…
Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap…
The physics underlying reset in bipolar resistive memory has been the subject of decades of controversy and has been identified as the primary barrier to resistive memory technology development. This manuscript introduces a nanoscale effect…
Analog in-memory computing (AIMC) accelerators enable efficient deep neural network computation directly within memory using resistive crossbar arrays, where model parameters are represented by the conductance states of memristive devices.…
We report on the fabrication of dendrimer sandwich devices with electrical switching and memory properties. The storage media is consisted of a redox-gradient dendrimer layer sandwiched in organic barrier thin films. The dendrimer layer…
An abrupt metal-insulator transition (MIT) was observed in VO2 thin films during the application of a switching voltage pulse to two-terminal devices. Any switching pulse over a threshold voltage for the MIT of 7.1 V enabled the device…
A unique set of characteristics are packed in emerging nonvolatile reduction-oxidation (redox)-based resistive switching memories (ReRAMs) such as their underlying stochastic switching processes alongside their intrinsic highly nonlinear…
As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consumption and radiation tolerance. Conventional MRAM utilizes…
Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations…
This work presents a comprehensive analysis of the variability and reliability of the resistive switching (RS) behavior in Prussian Blue (a mixed-valence iron(III/II) hexacyanoferrate compound) thin films, used as the active layer. These…
Through Random Telegraph Noise (RTN) analysis, valuable information can be provided about the role of defect traps in fine tuning and reading of the state of a nanoelectronic device. However, time domain analysis techniques exhibit their…
In the search for phase change materials (PCM) that may rival traditional random access memory, a complete understanding of the amorphous to crystalline phase transition is required. For the well-known Ge2Sb2Te5 (GST) and GeTe (GT)…
Previously, we demonstrated hysteretic and persistent changes of resistivity in two-terminal electronic devices based on charge trapping and detrapping at immobile metastable defects [H. Yin, A. Kumar, J.M. LeBeau, and R. Jaramillo, Phys.…
A dynamic systems model has previously been proposed for mem-resistors based on a driven damped harmonic oscillator differential equation describing electron and ionic depletion widths in a thin semiconductor film. This paper derives…
Two-dimensional (2D) materials enable new types of magnetic and electronic phases mediated by their reduced dimensionality like magic-angle induced phase transitions, 2D Ising antiferromagnets and ferromagnetism in 2D atomic layers and…