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Related papers: Electric field induced gap modification in ultrath…

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We extensively investigate the electronic and transport properties of a twisted bilayer graphene when subjected to both an external perpendicular electric field and a magnetic field. Using a basic tight-binding model, we show the flat…

Mesoscale and Nanoscale Physics · Physics 2023-11-13 Priyanka Sinha , Ayan Mondal , Simão Meneses João , Bheema Lingam Chittari

Employing density functional theory-based methods, we investigate monolayer and bilayer structures of hexagonal SnS$_{2}$, which is recently synthesized monolayer metal dichalcogenide. Comparison of 1H and 1T phases of monolayer SnS$_{2}$…

Mesoscale and Nanoscale Physics · Physics 2016-03-14 C. Bacaksiz , S. Cahangirov , A. Rubio , R. T. Senger , F. M. Peeters , H. Sahin

The electric field effect is a useful means of elucidating intrinsic material properties as well as for designing functional devices. The electric-double-layer transistor (EDLT) enables the control of carrier density in a wide range, which…

We present an ab-initio investigation of effects of shear strain on band structure and electronic properties of 2D phosphorene. We carried out DFT calculations to determine the shear stress as a function of shear strain and found the…

Materials Science · Physics 2015-12-18 Yashasvi Singh Ranawat , Rishabh Jain

By combining {\it ab initio} calculations and experiments we demonstrate how the band gap of the transition metal tri-chalcogenide TiS$_3$ can be modified by inducing tensile or compressive strain. We show by numerical calculations that the…

We investigate magnetism and band structure engineering in Moir\'e superlattice of blue phosphorus ($\beta$-P) and grey arsenene ($\beta$-As) bilayers, using \textit{ab initio} calculations. The electronic states near the valence and…

Materials Science · Physics 2019-05-20 Shantanu Agnihotri , Maneesh Kumar , Yogesh Singh Chauhan , Amit Agarwal , Somnath Bhowmick

Bilayers of graphitic materials have potential applications in field effect transistors (FETs). A potential difference applied between certain ionic bilayers made from insulating graphitic materials such as BN, ZnO and AlN could reduce gap…

Mesoscale and Nanoscale Physics · Physics 2016-07-01 A. R. Davenport , J. P. Hague

Vertical and lateral heterostructures of van der Waals materials provide tremendous flexibility for band structure engineering. Since electronic bands are sensitively affected by defects, strain, and interlayer coupling, the edge and…

In this work we use first-principles density-functional theory (DFT) calculations combined with the maximally localized Wannier function tight binding Hamiltonian (MLWF-TB) and Bethe-Salpeter equation (BSE) formalism to investigate…

Very recently, field-effect transistors based on few-layer phosphorene crystals with thickness down to a few nanometres have been successfully fabricated, triggering interest in this new functional two-dimensional material. In this work, we…

Superconductivity · Physics 2014-09-26 G. Q. Huang , Z. W. Xing

The intrinsic carrier transport dynamics in phosphorene is theoretically examined. Utilizing a density functional theory treatment, the low-field mobility and the saturation velocity are characterized for both electrons and holes in the…

Mesoscale and Nanoscale Physics · Physics 2016-08-24 Zhenghe Jin , Jeffrey T. Mullen , Ki Wook Kim

We present electronic structure calculations of twisted double bilayer graphene (TDBG): A tetralayer graphene structure composed of two AB-stacked graphene bilayers with a relative rotation angle between them. Using first-principles…

Mesoscale and Nanoscale Physics · Physics 2019-11-05 F. J. Culchac , Rodrigo B. Capaz , Leonor Chico , E. Suarez Morell

Structural degeneracies underpin the ferroic behavior of next-generation two-dimensional materials, and lead to peculiar two-dimensional structural transformations under external fields, charge doping and/or temperature. The most direct…

Mesoscale and Nanoscale Physics · Physics 2020-06-19 Albert Du , Zachary Pendergrast , Salvador Barraza-Lopez

Based on extensive first principle calculations, we explore the thickness dependent effective di- electric constant and slab polarizability of few layer black phosphorene. We find that the dielectric constant in ultra-thin phosphorene is…

Mesoscale and Nanoscale Physics · Physics 2016-06-08 Piyush Kumar , B. S. Bhadoria , Sanjay Kumar , Somnath Bhowmick , Yogesh Singh Chauhan , Amit Agarwal

Graphene is a two-dimensional (2D) semimetal with high mobility in charge carriers due to the existence of Dirac points. Silicene is another promising material, with properties analog to graphene. Many silicon (Si) based electronic devices…

Materials Science · Physics 2021-09-07 K M Abeywickrama , P K D D P Pitigala , W W P De Silva

Using both DFT as well as $G_0W_0$ calculations, we investigate static and dynamic effects on the phosphorene band gap upon deposition and encapsulation on/in BN multilayers. We demonstrate how competing long- and short-range effects cause…

Materials Science · Physics 2016-10-05 Lukas Eugen Marsoner Steinkasserer , Simon Suhr , Beate Paulus

Electronic properties of the graphene layer sandwiched between two hexagonal boron nitride sheets have been studied using the first-principles calculations and the minimal tight-binding model. It is shown that for the ABC-stacked structure…

Materials Science · Physics 2010-11-10 J. Slawinska , I. Zasada , P. Kosinski , Z. Klusek

Moir\'e superlattices engineer band properties and enable observation of fractal energy spectra of Hofstadter butterfly. Recently, correlated-electron physics hosted by flat bands in small-angle moir\'e systems has been at the foreground.…

The millimeter sized monolayer and bilayer 2H-MoTe2 single crystal samples are prepared by a new mechanical exfoliation method. Based on such high-quality samples, we report the first direct electronic structure study on them, using…

Layered transition metal dichalcogenides (TMDs) offer many attractive features for next-generation low-dimensional device geometries. Due to the practical and fabrication challenges related to in situ methods, the atomistic dynamics that…

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