Related papers: Reversible Electric-Field Driven Magnetic Domain W…
The paper investigates the influence of the magnetic field on the behavior of 180-degree domain boundaries in a uniaxial ferromagnetic film with inhomogeneous magnetoelectric interaction. It is shown that, depending on the magnitude and…
Ferroelectric domain walls represent multifunctional 2D-elements with great potential for novel device paradigms at the nanoscale. Improper ferroelectrics display particularly promising types of domain walls, which, due to their unique…
Existing data for soft magnetic materials of critical current for domain-wall motion, wall speed driven by a magnetic field, and wall electrical resistance, show that all three observable properties are related through a single parameter:…
The shape instability of magnetic domain walls under current is investigated in a ferromagnetic (Ga,Mn)(As,P) film with perpendicular anisotropy. Domain wall motion is driven by the spin transfer torque mechanism. A current density gradient…
We found by micromagnetic simulations that the motion of a transverse wall (TW) type domain wall in magnetic thin-film nanostripes can be manipulated via interaction with spin waves (SWs) propagating through the TW. The velocity of the TW…
Interfaces at the two-dimensional limit in oxide materials exhibit a rich span of functionality that differs significantly from the bulk behavior. Among such interfaces, domain walls in ferroelectrics draw special attention because they can…
We demonstrate that the magnetization of a ferromagnet in contact with an antiferromagnetic multiferroic (LuMnO3) can be speedily reversed by electric field pulsing, and the sign of the magnetic exchange bias can switch and recover…
Discovering alternative ways to drive domain wall (DW) dynamics is crucial for advancing spintronic applications. Here we demonstrate via atomistic spin dynamics simulations that optical torques can efficiently drive 90^{\circ} DWs in the…
We propose a magnetization reversal model to explain the perpendicular switching of a single ferromagnetic layer induced by an in-plane current. Contrary to previously proposed reversal mechanisms that such magnetic switching is directly…
The coupling between a current and a Bloch wall is examined in the half-metal limit of the double exchange model. The conduction electrons transfer angular momentum to the Bloch wall with 100% efficiency in the absence of pinning. The wall…
We present the theory of the spin motive force in antiferromagnets. We consider a one-dimensional antiferromagnetic domain wall strongly coupled with conduction electrons via an exchange interaction. We carry out a unitary transformation…
BiFeO3 is a model multiferroic in which the ferroelectric polarization is coupled to ferroelastic lattice distortions, yet deterministic control of its domain structure remains limited by high switching fields and competing polarization…
Spin-orbit spin transfer torque allows an efficient control of magnetization by an in-plane current. Recent experiments found that the spin-orbit torque has strong dependence on the magnetization angle [Garello et al., Nature Nanotechnol.…
Domain walls are ubiquitous in materials that undergo phase transitions driven by spontaneous symmetry breaking. Domain walls in ferroics and multiferroics have received tremendous attention recently due to their emergent properties…
Manipulation of magnetic domain walls can be used to improve the capabilities of the next generation of memory and sensing devices. Materials of recent interest for such devices include heterostructures of ultrathin ferromagnets sandwiched…
Perpendicularly magnetized materials have attracted tremendous interest due to their high anisotropy, which results in extremely narrow, nano-sized domain walls. As a result, the recently studied current-induced domain wall motion (CIDWM)…
In this work, we study the microwave field driven antiferromagnetic domain wall motion in an antiferromagnetic nanowire, using the numerical calculations based on a classical Heisenberg spin model. We show that a proper combination of a…
Ferromagnetic domain walls -transitional regions between magnetic domains- are an essential ingredient for racetrack memory, a device concept that promises to deliver faster and more compact memory storage compared to other non-volatile…
Optimizing ferroelectrics for contemporary high-frequency applications asks for the fundamental understanding of ferroelectric switching and domain wall (DW) motion in ultrafast field pulses while the microscopic understanding of the latter…
Multiferroics have received intense attention due to their great application potential in multi-state information storage devices and new types of sensors. Coupling among ferroic orders such as ferroelectricity, (anti-)ferromagnetism,…